Details, datasheet, quote on part number: FQU7N10L
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Logic Level
TitleLogic Level
Description100V N-channel Logic Level QFET
CompanyFairchild Semiconductor
DatasheetDownload FQU7N10L datasheet
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Features, Applications

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.


5.8A, 100V, RDS(on) = 0.35 @VGS 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirments allowing direct operation from logic drives

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25C) * Power Dissipation (TC = 25C)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 50 110 Units C/W

* When mounted on the minimum pad size recommended (PCB Mount)

BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 250 A, Referenced to 25C VDS 100 V, VGS 0 V VDS = 125C VGS 20 V, VDS 0 V VGS -20 V, VDS V/C A nA

VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, 250 A VGS 2.9 A VGS 2.9 A VDS 2.9 A

Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS 25 V, VGS = 1.0 MHz pF

td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS 7.3 A, VGS 5 V

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS 5.8 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS 7.3 A, dIF = 100 A/s

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature = 2.23mH, IAS = 5.8A, VDD 25 , Starting 25C 3. ISD 7.3A, di/dt 300A/s, VDD BVDSS, Starting 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature


Some Part number from the same manufacture Fairchild Semiconductor
FQU7N20 200V N-channel QFET
FQU7N20L 200V N-channel Logic Level QFET
FQU7N30 300V N-channel QFET
FQU7P06 60V P-channel QFET
FQU7P20 200V P-channel QFET
FQU8N25 250V N-channel QFET
FQU8P10 100V P-channel QFET
FQU9N08 80V N-channel QFET
FQU9N08L 80V N-channel Logic Level QFET
FQU9N15 150V N-channel QFET
FQU9N25 250V N-channel QFET

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