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Part: FQU9N08L
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> DMOS (Double-diffused MOS)
-> Logic Level
Description: 80V N-channel Logic Level QFET
Company: Fairchild Semiconductor
Datasheet: Download FQU9N08L datasheet File size : 203 kB
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Datasheet text preview:
FQD9N08L / FQU9N08L
December 2000
FQD9N08L / FQU9N08L
80V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
QFET
Features
· · · · · · · · 7.4A, 80V, RDS(on) = 0.21 @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives
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FQD Series
I-PAK
GDS
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD9N08L / FQU9N08L 80 7. 4 4.68 29.6 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
55 7. 4 2. 5 6. 5 2. 5 25 0. 2 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 5.0 50 110 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International Rev. A2, December 2000
FQD9N08L / FQU9N08L
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VDS = 64 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 80 ------0.08 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.7 A VGS = 5 V, ID = 3.7 A VDS = 25 V, ID = 3.7 A
(Note 4)
1.0 ---
-0.15 0.17 4. 8
2. 0 0.21 0.23 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---215 70 16 280 90 20 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 64 V, ID = 9.3 A, VGS = 5 V
(Note 4, 5)
VDD = 40 V, ID = 9.3 A, RG = 25
(Note 4, 5)
--------
6. 5 180 13 30 4. 7 1. 2 2. 8
23 370 35 70 6. 1 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.3 A, dIF / dt = 100 A/µs
(Note 4)
------
---54 80
7. 4 29.6 1. 5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.38mH, IAS = 7.4A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 9.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
FQD9N08L / FQU9N08L
Typical Characteristics
10
1
ID, Drain Current [A]
ID , Drain Current [A]
VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top :
10
1
150 10
0
10
0
25 -55
Notes : 1. VDS = 25V 2. 250 Pulse Test s
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
0.6 VGS = 5V 0.4 VGS = 10V 0.2
Note : TJ = 25
10
1
10
0
150
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
600
500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VGS, Gate-Source Voltage [V]
VDS = 40V
8
400
Capacitance [pF]
VDS = 64V
300
Ciss Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
200
4
100
Crss
2
Note : ID = 9.3A
0 -1 10
10
0
10
1
0
0
1
2
3
4
5
6
7
8
9
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Others parts begin by fq
FQ-1 FQ-2 FQ-3 FQ-4 FQ-5 FQ-6
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