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Details, datasheet, quote on part number:FRS140R3
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Datasheet text preview:
FRS140D, FRS140R, FRS140H
June 1998
17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs
Package
TO-257AA
Features
· 17A, 100V, RDS(on) = 0.145 · Second Generation Rad Hard MOSFET Results From New Design Concepts · Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically
· Gamma Dot · Photo Current · Neutron
- Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet.
CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications.
Symbol
Absolute Maximum Ratings
(TC = +25oC) Unless Otherwise Specified FRS140D, R, H 100 100 17 11 51 ±20 75 30 0.60 51 17 51 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC
oC
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
FRS140D, FRS140R, FRS140H
Pre-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rjc Rja ID = 17A, VGD = 0 I = 17A; di/dt = 100A/µs Free Air Operation VDD = 50V, ID = 17A IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 100V, VGS = 0 VDS = 80V, VGS = 0 VDS = 80V, VGS = 0, TC = +125oC Time = 20µs VGS = 10V, ID = 17A VGS = 10V, ID = 11A VDD = 50V, ID = 17A Pulse Width = 3µs Period = 300µs, RG = 25 0 VGS 10 (See Test Circuit) MIN 100 2.0 1 32 60 3 5 18 0.6 MAX 4.0 100 100 1 0.025 0.25 51 2.59 0.145 60 320 ns 290 260 6 130 240 14 22 nc 74 1.8 800 1.67 60 V ns
oC/W
UNITS V V nA nA mA A V
nc
V
VDD
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L VDS + CURRENT I TRANSFORMER AS
RL
-
VGS = 12V DUT 0V RGS 0V tP 50 VARY tP TO OBTAIN REQUIRED PEAK IAS VGS 20V DUT 50 + VDD
50V -150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
FRS140D, FRS140R, FRS140H
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain Current (Note 4, 6) (Note 5, 6) Drain-Source On-State Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 6/25/90 on TA 17641 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE FRS140D, R FRS140H FRS140D, R FRS140H FRS140D, R FRS140H FRS140D, R FRS140H FRS140D, R FRS140H FRS140D, R FRS140H FRS140D, R FRS140H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = -20V, VDS = 0 VGS = -20V, VDS = 0 VGS = 0, VDS = 80V VGS = 0, VDS = 80V VGS = 10V, ID = 17A VGS = 16V, ID = 17A VGS = 10V, ID =11A VGS = 14V, ID =11A MIN 100 95 2.0 1.5 MAX 4.0 4.5 100 200 100 200 25 100 2.59 3.89 0.145 0.218 UNITS V V V V nA nA nA nA µA µA V V
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