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Details, datasheet, quote on part number:FS6M07652RTCYDT
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Datasheet text preview:
www.fairchildsemi.com
FS6M07652RTC
Features
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Fairchild Power Switch(FPS)
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller features integrated fixed oscillator, the under voltage lock out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and a fault protection circuitry. compared with a discrete MOSFET and a controller or a RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective LCD monitor power supply.
TO-220F-5L
Fixed Frequency Internal Burst Mode Controller for Stand-by Mode Pulse By Pulse Over Current Limiting Over Current Protection(Auto Restart Mode) Over Voltage Protection (Auto Restart Mode) Over Load Protection(Auto Restart Mode) Internal Thermal Shutdown Function(Latch Mode) Under Voltage Lockout Internal High Voltage Sense FET Soft Start
Application
· LCD Monitor SMPS · Adaptor
1
1. Drain 2. GND 3. VCC 4. Feedback 5. SoftStart
Internal Block Diagram
VCC Drain
3
Vref
OSC Vref Vfb Vth=1V Burst mode controller
1
SoftStart
5
Internal Bias
Vref UVLO
S Q
Ron
Vcc Vth=11V/12V
R
Roff PWM
Feedbock
4
Ifb
2.5R R Vcc Vfb Offset Rsenese Vref
Idelay OLP Vth=7.5V Vcc Vth=33V OVP
OCL
Filter (130nsec)
Vth=2V
2 GN D
S
UVLO Reset (Vcc=9V)
Q
Q
S R
Power-on Reset (Vcc=6.5V)
TSD
(Tj=160 )
R
Rev.1.0.4
©2003 Fairchild Semiconductor Corporation
FS6M07652RTC
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified) Characteristic Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed
(1)
Symbol VDGR VGS IDM ID ID IAS(EAS) VCC, MAX VF B VS S PD(Watt H/S) Darting Tj TA TSTG
Value 650 ± 30 14.4 3.6 2.28 17(570) 35 -0.3 to VCC -0.3 to 10 46 0.37 +150 -25 to +85 -55 to +150
Unit V V ADC ADC ADC A(mJ) V V V W W /° C °C °C °C
Continuous Drain Current (Tc = 25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Current(3)(Energy (2)) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range
Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=81mH, starting Tj=25°C 3. L=13uH, starting Tj=25°C
2
FS6M07652RTC
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
Note: 1. Pulse test : Pulse width 300µS, duty 2% 1 2. S = --R
(2)
Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Q gs Qgd
Condition VGS=0V, ID=250µA VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125°C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET switching time is essentially independent of operating temperature)
Min. 650 -
Typ. 1.3 3.3 1200 125 23 22 70 105 65 40 6.5 18
Max. 200 300 1 .6 -
Unit V µA µA
S pF
nS
nC
3
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