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Details, datasheet, quote on part number:FS6S
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| Part: | FS6S |
| Category: | Power Management => AC-DC Controllers/Converters => High & Low Side Switch |
| Description: | Fairchild Power Switch ( FPS ) |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FS6S datasheet File size : 223 kB |
| Request For quote: | Find where to buy FS6S
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Datasheet text preview:
www.fairchildsemi.com
FS6S-SERIES
FS6S0965RT/FS6S1265RB
Fairchild Power Switch(FPS)
Features
· · · · · · · · · · · · · · · Wide Operating Frequency Range Up to 150Khz Lowest Cost SMPS Solution Lowest External Components Low Start up Current (max:170uA) Low Operating Current (max:15mA) Internal High Voltage SenseFET Built-in Auto Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal
Description
The Fairchild Power Switch(FPS) product family are specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller features the integrated fixed oscillator, the under voltage lockout, the optimized gate turn on/turn off driver, the thermal shut down protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a controller or a RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce the total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective monitor power supply.
TO-220F-5L TO-3P-5L
Application
· Monitor SMPS
1
1
1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync.
Internal Block Diagram
Vcc SoftStart SoftStart & Sync
Vref
Drain
3
Vpp=5.8/7.2V OSC Internal Bias Vref Vfb Vth=1V Burst mode controller Vref
1
5
UVLO
S Q
Ron
Vcc Vth=11V/12V
R
Roff
Feedback
PWM
4
Ifb
2.5R R Vcc Vfb Offset Rsenese
Vref
Idelay OLP Vth=7.5V Vcc Vth=30V OVP UVLO Reset (Vcc=9V)
OCL
Filter (130nsec)
TS D
Vth=1V
2
GND
S R
Q
(Tj=160)
Rev.1.0.6
©2002 Fairchild Semiconductor Corporation
FS6S-SERIES FS6S0965RT/FS6S1265RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified) Characteristic Symbol VD,MAX VDGR VGS IDM ID ID
(2)
Value 650 650 ± 30 36 9 7.2 25(950) 35 -0.3 to VCC -0.3 to 10 48 0. 3 8 5 +160 -25 to +85 -55 to +150
Unit V V V ADC ADC ADC A(mJ) V V V W W / °C °C °C °C
FS6S0965RT
Maximum Drain Voltage Drain-Gate Voltage(RGS=1M) Gate-Source(GND) Voltage Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanche Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. )
IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG
FS6S1265RB
Maximum Drain Voltage Drain-Gate Voltage(RGS=1M) Gate-Source(GND) Voltage Drain Current Pulsed
(1)
VD,MAX VDGR VGS IDM ID ID
(2)
650 650 ± 30 48 12 8.4 30(950) 35 -0.3 to VCC -0.3 to 10 240 1.92 +160 -25 to +85 -55 to +150
V V V ADC ADC A DC A(mJ) V V V W W / °C °C °C °C
Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanche Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. )
IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG
2
FS6S-SERIES FS6S0965RT/FS6S1265RB
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Q gs Qgd Conditions VGS = 0V, ID = 50µA VDS=Max., Rating, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward Transconductance(1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge VDS= 0.8Max., Rating, VGS = 0V, TC = 125°C VGS = 10V, ID = 4.5A VDS = 50V, ID = 4.5A VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 9.0A (MOSFET switching time is essentially independent of operating temperature) VGS = 10V, ID = 9.0A, VDS = 0.5BVDSS(MOSFET switching time is essentially independent of operating temperature) VGS = 0V, ID = 50µA VDS=Max, Rating, VGS = 0V Zero Gate Voltage Drain Current Static Drain-Source on Resistance (1) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
(1)
M in . 650 -
Typ. 1.1 1300 135 25 25 75 130 70 45 8 22
Max. 200 300 1.2 -
Unit V µA µA S
FS6S0965RT
Drain Source Breakdown Voltage
pF
nS
nC
FS6S1265RB
Drain-Source Breakdown Voltage BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Q gs Qgd 650 0.7 1820 185 32 38 120 200 100 60 10 30 200 300 0.9 nC nS pF V µA µA S
VDS= 0.8Max, Rating, VGS = 0V, TC = 125°C VGS = 10V, ID = 4.5A VDS = 50V, ID = 4.5A VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 12.0A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 12.0A, VDS = 0.5BVDSS(MOSFET switching time are essentially independent of operating temperature)
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