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Details, datasheet, quote on part number:FS6S0765RCH
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Datasheet text preview:
www.fairchildsemi.com
FS6S0765RCH
Features
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Fairchild Power Switch(FPS)
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn on/turn off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared with discrete MOSFET and controller or RCC switching converter solution, the Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity and system reliability. It has a basic platform well suited for cost effective monitor power supply.
TO-220-5L
Wide Operating Frequency Range up to 150KHz Internal Burst Mode Controller for Stand-by Mode Pulse by Pulse Over Current Limiting Over Current Protection(Auto Restart Mode) Over Voltage Protection (Auto Restart Mode) Over Load Protection(Auto Restart Mode) Internal Thermal Shutdown Function(Auto Restart Mode) Under Voltage Lockout Internal High Voltage SenseFET(CFET) Eternal Sync Terminal/Soft Start
1
1. Drain 2. GND 3. VCC 4. Feedback 5. Soft Start & Sync.
Internal Block Diagram
Vcc S o ftS t a rt & Sync
Vref
D r a in
3
V p p = 5 .8 / 7 . 2 V O SC In te r n a l Bias V re f V fb V th = 1 V B u rs t mode c o n t r o lle r Vre f
1
5
U VLO
S Q
R on
Vcc V th = 1 1 V / 1 2 V
R
R o ff
Feedback
PWM
4
If b
2.5R R Vcc V f b Offset Rsenese
Vre f
I d e la y OLP V th = 7 .5 V Vc c V th = 3 0 V O VP
O CL
F i lt e r (1 3 0 n s ec ) TS D ( T j= 1 6 0 )
V th = 1 V
2
GND
S
U V L O Reset (Vcc= 9V)
Q
R
Rev.1.0.0
©2002 Fairchild Semiconductor Corporation
FS6S0765RCH
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified) Parameter Drain-Source(GND) Voltage Gate-Source (GND) Voltage Drain Current Pulsed (2) Single Pulsed Avalanche Energy (3) Single Pulsed Avalanche Current
(4) (1)
Symbol VDSS VDGR VGS ID M EA S IA S ID ID VCC VF B VS_S PD(Watt H/S) Darting Tj TA TSTG
Value 650 650 ±30 28 370 17 7 4.5 35 -0.3 to Vcc -0.3 to 10 145 1 .16 +150 -25 to +85 -55 to +150
Unit V V V ADC mJ A ADC ADC V V V W W /° C °C °C °C
Drain-Gate Voltage (RGS=1M)
Continuous Drain Current (Tc = 25°C) Continuous Drain Current (TC=100°C) Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range
Note: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 14mH, starting Tj = 25°C 4. L = 13uH, starting Tj = 25°C
2
FS6S0765RCH
Electrical Characteristics (SenseFET part)
(Ta=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate Source Charge Gate Drain (Miller) Charge
Note: Pulse test : Pulse width 300µS, duty 2%
Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td( on) tr td(off) tf Qg Q gs Qgd
Condition VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VDS= 520V VGS = 0V, TC = 125°C VGS = 10V, ID = 3.5A VDS = 40V, ID = 3.5A VGS = 0V, VDS = 25V, f = 1MHz VDD= 325V, ID= 6.5A (MOSFET switching time is essentially independent of operating temperature) VGS = 10V, ID = 6.5A, VDS = 520V (MOSFET switching time is essentially independent of operating temperature)
Min. 650 -
Typ. 1 .4 8 1415 100 15 25 60 115 65 40 7 12
Max. 200 300 1.6 -
Unit V µA µA
m ho pF
nS
nC
3
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