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Details, datasheet, quote on part number:FSPL234R3
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Datasheet text preview:
FSPL234R, FSPL234F
Da ta Sheet Ju ne 2001 Fi l e Number
48 81
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low r DS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured.
TM
Features
· 7A, 250V, rD S(ON ) = 0.245 · UIS Rated · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS · Photo Current - 4.0nA Per-RAD (Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
The Fairchild portfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and r D S(O N) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-S-19500. Formerly available as type TA45216W.
Symbol
D
G
S
Packaging
TO- 205AF
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND Engineering samples TX V Space TX V Space FSPL234D1 FSPL234R3 FS PL234R4 FSPL234F3 FS PL234F4
D
G
S
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. A1
FSPL234R, FSPL234F
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSPL234R, FSPL234F Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) 25 10 0.20 28 7 28 -55 to 150 300 1.0 (Typical) W W W/ oC A A A
oC oC
UNITS V V A A A V
250 250 7 4 28 ±30
g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETE R
TC = 25oC, Unless Otherwise Specified SYM BOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 250 2.0 1.0 VGS = 0V to 12V 125V < VDD < 200V ID = 7A VGS = 0V to 20V VGS = 0V to 2V ID = 7A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.215 30 10 8 45 3 6.5 1400 200 8 M AX 5.5 4.5 25 250 100 200 1.75 0.245 0.485 20 40 35 15 33 12 10 5.0 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (12) Qg s Qgd Qg (20) Qg (TH) V(PLATEAU) CISS COSS CRSS RJC
VDS = 200V, VGS = 0V VGS = ±30V VGS = 12V, ID = 7A ID = 4A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
VDD = 125V, ID = 7A, RL = 17.9, VGS = 12V, RGS = 7.5
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. A1
FSPL234R, FSPL234F
Source to Drain Diode Specifications
PARAMETE R Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR TC = 25oC, Unless Otherwise Specified MIN PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance N OTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, V DS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) S YMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±30V, VDS = 0V VGS = 0, VDS = 200V VGS = 12V, ID = 7A VGS = 12V, ID = 4A 250 2.0 M AX 4.5 100 25 1.75 0.245 MIN 250 1.5 4.5 100 50 2.52 0.300 MA X UNITS V V nA µA V 100K RAD 300K RAD ISD = 7A ISD = 7A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP 1.7 M AX 1.5 360 UNITS V ns µC
Electrical Specifications up to 300K RAD
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) (NOTE 6) TYPIC AL LET (MeV/mg/cm) 37 37 60 60 82 82 APPLIED VGS BIAS (V) -10 -15 -2 -8 0 -5 ( NOTE 7) MAXIMUM VDS BIAS (V) 250 200 200 150 150 100
T EST S ingle Event Effects Safe Operating Area
SYM BO L S EESOA
TYPICAL RANGE (µ) 36 36 32 32 28 28
NOTES : 4. Testing conducted at Brookhaven National Labs or Texas A&M. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 280 240 200 VDS (V) 160 120 80 FLUENCE = 1E5 IONS/cm2 (TYPICAL) TEMP = 25oC VDS (V)
280 240 200 160 120 80 LET = 82 GOLD 40
LET = 37 BROMINE
40 0 0 0 -4 -8 VGS (V) -12 -16 -2 0 0 -5 -10
LET = 60 IODINE -15 VGS (V) -20 -25 -30
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FSPL234R, FSPL234F Rev. A1
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