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Details, datasheet, quote on part number:FSPYC160D1
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Datasheet text preview:
FSPYC160R, FSPYC160F
Da ta Sheet J ul y 2001 Fi l e Number
49 23
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low r DS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300 krads while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured.
TM
Features
· 70A (Current Limited by Package), 100V, rDS(ON) = 0.0105 · UIS Rated · Total Dose - Meets Pre-RAD Specifications to 100 krad (Si) - Rated to 300 krad (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias · Dose Rate - Typically Survives 3E9 rad (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS · Photo Current - 9nA Per-rad (Si)/s Typically · Neutron - Maintain Pre-rad Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
The Fairchild portfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and r D S(O N) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45213W.
Symbol
D
G
S
Packaging
SM D2
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND E ngineering Samples FSPYC160D1 TXV Space TXV Space FSPYC160R3 FSPYC160R4 FSPYC160F3 FSPYC160F4
©2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. A1
FSPYC160R, FSPYC160F
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSPYC160R, FSPYC160F Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) 208 83 1.67 170 70 200 -55 to 150 300 3.3 (Typical) W W W/ oC A A A
oC oC
UNITS V V A A A V
100 100 70 (Note) 66 200 ± 30
g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability
Electrical Specifications
PA RAME TER
TC = 25oC, Unless Otherwise Specified SYM BOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 100 2.0 1.0 VGS = 0V to 12V 50V < VDD < 80V, ID = 70A VGS = 0V to 20V VGS = 0V to 2V ID = 70A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.009 145 35 45 230 12 6.5 6900 1670 100 MA X 5.5 4.5 25 250 100 200 0.77 0.0105 0.019 35 125 60 20 175 45 55 0.6 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Dr ain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (12) Qgs Qgd Qg (20) Qg (TH) V(PLATEAU) CISS COSS CRSS RJC
VDS = 80V, VGS = 0V VGS = ±30V
Gate to Source Leakage Current
Dr ain to Source On-State Voltage Dr ain to Source On Resistance
VGS = 12V, ID = 70A ID = 66A, VGS = 12V TC = 25oC TC = 125oC
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge P lateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
VDD = 50V, ID = 70A, RL = 0.71, VGS = 12V, RGS = 2.35
©2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. A1
FSPYC160R, FSPYC160F
Source to Drain Diode Specifications
PARAMETE R Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR ISD = 70A ISD = 70A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP 1.8 M AX 1.2 290 UNITS V ns µC
Electrical Specifications up to 300 krad TC = 25oC, Unless Otherwise Specified
MIN PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance N OTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, V DS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) S YMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0, VDS = 80V VGS = 12V, ID = 70A VGS = 12V, ID = 66A 100 2.0 M AX 4.5 100 25 0.77 0.0105 MIN 100 1.5 MA X UNITS 4.5 100 50 0.84 0.0115 V V nA µA V 100 krad 300 krad
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) (NOTE 6) TYPICAL LET (MeV/mg/cm) 37 60 82 82 NOTES : 4. Testing conducted at Brookhaven National Labs or Texas A&M. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au. 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICALRANGE (µ) 36 32 28 28 APPL IED VGS BIAS (V) -5 -2 0 -2 (NOTE 7) MAXIMUM VDS BIAS (V) 100 80 60 30
T EST Single Event Effects Safe Operating Area
SYM BO L S EESOA
Performance Curves
Unless Otherwise Specified
120 100 80 VDS (V) 60 40
LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ FLUENCE = 1E5 IONS/cm2 (TYPICAL)
100 LET = 37 80
VDS (V)
60
40 LET = 82 20
20 TEMP = 25oC 0 0 -1 -2 -3 -4 VGS (V) -5 -6 -7 LET = 60 0 0 10 20 30 40 50 60 NEGATIVE VGS BIAS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
©2001 Fairchild Semiconductor Corporation
FSPYC160R, FSPYC160F Rev. A1
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