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Details, datasheet, quote on part number:HUF75307D3
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Datasheet text preview:
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
Features
· 15A, 55V · Simulation Models - Temperature Compensated PSPICE ® and SABERTM Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER HUF 75307P3 HUF 75307D3 HUF 75307D3S PACKAGE TO-220AB TO-251AA TO-252AA BRAND 75307P 75307D 75307D
S G
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
Packaging
JEDEC TO-220AB
SOU RCE DRAIN GATE D RAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE D RAIN GATE
JEDEC TO-252AA
DRA IN (FLANGE)
GATE SOURCE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
HUF75307P3, HUF75307D3, HUF75307D3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 55 55 ± 20 15 F i gure 4 Figures 6, 14, 15 45 0. 3 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MI N TYP MA X UNITS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC
55 -
-
1 25 0 ± 100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 15A, VGS = 10V (Figure 9)
2 -
0. 075
4 0.090
V
RJC RJA
(Figure 3) TO-220AB TO-251AA, TO-252AA
-
-
3.3 62 10 0
oC/W oC/W oC/W
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Reverse Transfer Capacitance Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 30V, ID 15A, RL = 2.0 Ig(REF) = 1.0mA (F igure13) 1. 2 4 nC nC 16 9 0. 6 20 11 0.8 nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 30V, ID 15A, RL = 2.0, VGS = 10V, RGS = 100 7 40 35 45 60 10 0 ns ns ns ns ns ns
©2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
HUF75307P3, HUF75307D3, HUF75307D3S
Electrical Specifications
PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 250 100 25 pF pF pF TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MI N TYP MA X UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL VSD trr QRR ISD = 15A ISD = 15A, dISD/dt = 100A/µs ISD = 15A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP MA X 1. 2 5 45 55 UNITS V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) 20
ID, DRAIN CURRENT (A) 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
15
10
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
THERMAL IMPEDANCE
ZJC, NORMALIZED
PDM
0.1 t1 t2 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
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