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Details, datasheet, quote on part number:HUF75307T3ST
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Datasheet text preview:
HUF75307T3ST
Da ta Sheet D ec e m be r 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
Features
· 2.6A, 55V · Ultra Low On-Resistance, rDS(ON) = 0.090 · Diode Exhibits Both High Speed and Soft Recovery · Temperature Compensating PSPICE® Model · Thermal Impedance SPICE Model · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER HUF 75307T 3ST P ACKAGE SOT-223 5307
S
BRAND
G
NOTE: HUF75307T3ST is available only in tape and reel.
Packaging
S O T -2 2 3
DRA IN (FLANGE)
GATE DRAIN SOURCE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75307T3ST Rev. B
HUF75307T3ST
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified 55 55 ± 20 V 2. 6 F i gure 5 Figures 6, 14, 15 1.1 9.09 -55 to 150 300 260 UNITS V V V A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W mW/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TA = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) Q gs Qgd CISS COSS CRSS RJA Pad Area = 0.171 in2 (see note 2) Pad Area = 0.068 in2 Pad Area = 0.026 in2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 30V, ID 2.6A, RL = 11.5 Ig(REF) = 1.0mA (Figure 13) TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 11) VGS = VDS, ID = 250µA (Figure 10) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TA = 150oC VGS = ±20V ID = 2.6A, V GS = 10V) (Figure 9) VDD = 30V, ID 2.6A, RL = 11.5, VGS = 10V, RGS = 25 MI N 55 2 TYP 0.070 5 30 35 25 14 8.3 0.6 1. 00 4.00 250 115 30 M AX 4 1 250 100 0.090 55 90 17 10 0. 8 110 128 147 UNITS V V µA µA nA ns ns ns ns ns ns nC nC nC nC nC pF pF pF
oC/W oC/W oC/W
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge NOTE: 2. 110 oC/W measured using FR-4 board with 0.171in2 footprint for 1000s. SYMBOL VSD trr QRR TEST CONDITIONS ISD = 2.6A ISD = 2.6A, dISD/dt = 100A/µs ISD = 2.6A, dISD/dt = 100A/µs MI N TYP MA X 1. 25 40 50 UNITS V ns nC
©2001 Fairchild Semiconductor Corporation
HUF75307T3ST Rev. B
HUF75307T3ST Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 3.0 RJA = 110oC/W 2.5 2.0 1.5 1.0 0.5 0 25
0.8 0.6 0.4 0.2 0
0
50
100
150
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
10
THERMAL IMPEDANCE
ZJA, NORMALIZED
1
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
RJA = 110oC/W
0.1 PDM t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-2 10-1 100 t , RECTANGULAR PULSE DURATION (s) 101 102 103
0.01
0.001
10-5
10-4
10-3
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100 TJ = MAX RATED TA = 25oC RJA = 110oC/W 10 100µs 1ms 1 10ms
30
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I
ID, DRAIN CURRENT (A)
IDM, PEAK CURRENT (A)
10
= I25
150 - TA 125 RJA = 110oC/W
0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
0.01 1
VDSS(MAX) = 55V 200
10 100 VDS, DRAIN TO SOURCE VOLTAGE (V)
1 10-3
10-2
10-1 100 101 t , PULSE WIDTH (s)
102
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF75307T3ST Rev. B
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