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Details, datasheet, quote on part number:HUF76113T3ST
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Datasheet text preview:
HUF76113T3ST
Da ta Sheet Ju ne 2003
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. For merly developmental type TA76113.
Features
· Logic Level Gate Drive · 4.7A, 30V · Ultra Low On-Resistance, rD S(O N) = 0.031 · Temperature Compensating PSPICE® Model · Temperature Compensating SABERTM Model · Thermal Impedance SPICE Model · Thermal Impedance SABER Model · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
P ART NUMBER HUF76113T3ST PA CKAGE SOT-223 76113 BRAND
Symbol
D
NOTE: HUF76113T3ST is available only in tape and reel.
G
S
Packaging
SOT-223
GATE DRAIN SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
HUF76113T3ST
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified HUF76113T3ST Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 30 30 ±20 4.7 2.7 2.6 Figure 4 Figure 6 1.1 0.0091 -55 to 150 300 260 W W/oC
oC oC oC
UNITS V V V A A A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP M AX UNITS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, VGS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150oC
30 -
-
1 250 ±100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 11) ID = 4.7A, VGS = 10V (Figure 9, 10) ID = 2.7A, VGS = 5V (Figure 9) ID = 2.6A, VGS = 4.5V (Figure 9)
1 -
0.027 0.033 0.035
3 0.031 0.038 0.040
V
THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.173 in2 (Note 2) Pad Area = 0.068 in2 (See TB377) Pad Area = 0.026 in2 (See TB377) SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 2.6A, RL = 5.8, VGS = 4.5V, RGS = 18 (Figur e 15) 12 46 31 31 90 95 ns ns ns ns ns ns 110 133 157
oC/W oC/W oC/W
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
HUF76113T3ST
Electrical Specifications
PARAMETER TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP M AX UNITS
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAP ACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: 2. Rated with R JA=110oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds. CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figur e 13) 625 310 60 pF pF pF Qg(TOT) Q g (5 ) Qg(TH) Qgs Qgd VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V, ID 2.7A, RL = 5.5 Ig(REF) = 1.0mA (Figure 14) 17.0 9.5 0.73 1.50 4.30 20.5 11.5 0.90 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 4.7A, RL = 3.2, VGS = 10V, RGS = 9.1 (Figur e 16) 4 21 31 25 40 85 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 4.7A ISD = 2.7A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 2.7A, dISD/dt = 100A/µs ISD = 2.7A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP M AX 1.25 1.00 44 46 UNITS V V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) ID, DRAIN CURRENT (A) 5 VGS = 10V, R JA = 110oC/W 4
3 VGS = 4.5V, RJA = 110oC/W 2
1
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
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