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Details, datasheet, quote on part number:HUF76129D3
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Datasheet text preview:
HUF76129D3, HUF76129D3S
Data Sheet January 2003
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76129.
Features
· Logic Level Gate Drive · 20A, 30V · Ultra Low On-Resistance, rD S(O N) = 0.016 · Temperature Compensating PSPICE® Model · Temperature Compensating SABER© Mode · Thermal Impedance SPICE Model · Thermal Impedance SABER Model · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HUF76129D3 HUF76129D3S PA CKAGE TO-251AA TO-252A A BRAND 76129D 76129D
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF76129D3ST.
G
S
Packaging
JEDEC TO-251AA JEDEC TO-252AA
DRAIN (FLANGE)
S O URCE DRAIN GATE GATE SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76129D3, HUF76129D3S Rev. B1
HUF76129D3, HUF76129D3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 30 30 ±20 20 20 20 Figure 4 Figures 6, 17, 18 105 .83 -55 to 150 300 260 W W/oC
oC oC oC
V V V A A A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC. TA = 25oC, Unless Otherwise Specified SYMBOL TES T CONDITIONS MIN TYP M AX UNITS
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, VGS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150oC
30 -
-
1 250 ±100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 11) ID = 20A, VGS = 10V (Figure 9, 10) ID = 20A, VGS = 5V (Figure 9) ID = 20A, VGS = 4.5V (Figure 9)
1 -
0.014 0.0175 0.0195
3 0.016 0.021 0.023
V
THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 20A, RL = 0.75, VGS = 4.5V , RGS = 10 (Figures 15, 21, 22) 20 165 30 54 275 125 ns ns ns ns ns ns R JC RJA (Figure 3) TO-251, TO-252 1.20 100
oC/W oC/W
©2003 Fairchild Semiconductor Corporation
HUF76129D3, HUF76129D3S Rev. B1
HUF76129D3, HUF76129D3S
Electrical Specifications
PARAMETER SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Chatge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) 1425 720 170 pF pF pF Qg(TOT) Qg(5) Qg(TH) Qgs Qg d VGS = 0V to 10V VDD = 15V, ID 20A, RL = 0.75 VGS = 0V to 5V Ig(REF) = 1.0mA VGS = 0V to 1V (Figures 14, 19, 20) 38 22 1.4 3.70 11.20 46 26 1.7 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 20A, RL = 0.75, VGS = 10V, RGS = 10 (Figures 16, 21, 22) 7 47 60 54 80 110 ns ns ns ns ns ns TA = 25oC, Unless Otherwise Specified (Continued) SYMBOL TES T CONDITIONS MIN TYP M AX UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge S YMBOL VSD trr QRR ISD = 20A ISD = 20A, dISD/dt = 100A/µs ISD = 20A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP M AX 1.25 72 107 UNITS V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 1 25 150 TA , AMBIENT TEMPERATURE (oC) ID, DRAIN CURRENT (A) 25
20
15
VGS=10V VGS=4.5 V
10
5
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76129D3, HUF76129D3S Rev. B1
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