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Details, datasheet, quote on part number:HUF76131SK8
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Datasheet text preview:
HUF 76131S K8
Data Sheet January 2003
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. For merly developmental type TA76131.
Features
· Logic Level Gate Drive · 10A, 30V · Ultra Low On-Resistance, rD S(O N) = 0.013 · Temperature Compensating PSPICE® Model · Thermal Impedance SPICE Model · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
SOURCE(1) DRAIN(8)
Ordering Information
PART NUMBER HUF76131SK8 PA CKAGE MS-012A A BRAND 76131SK8
SOURCE(2)
DRAIN(7)
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76131SK8T.
SOURCE(3) DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5 1 2 3 4
©2003 Fairchild Semiconductor Corporation
HUF76131SK8 Rev. B1
HUF76131SK8
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified HUF76131SK 8 30 30 ±20 10 Figure 5 Figure 6 2.5 0.02 -55 to 150 300 260 UNITS V V V A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TA = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) TEST CONDITIONS ID = 250µA, V GS = 0V (Figure 11) VGS = VDS, ID = 250µA (Figure 10) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TA = 150oC VGS = ±20V ID = 10A, VGS = 4.5V (Figures 9,14) ID = 10A, VGS = 5V ID = 10A, VGS = 10V MIN 30 1 VGS = 0V to 10V VDD = 15V, ID 10A, VGS = 0V to 5V RL = 1.5, Ig(REF) = 1.0mA (Figure 13) VGS = 0V to 1V VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) Pad Area = 0.76 in2 (Note 2) Pad Area = 0.054 in2 (See TB377) Pad Area = 0.0115 in2 (See TB377) TYP 0.017 0.015 0.011 15 61 33 36 39 22 1.53 4.00 9.50 1605 685 115 M AX 1 250 ±100 0.018 0.017 0.013 115 105 47 26 1.85 50 143.4 177.3 UNITS V V µA µA nA ns ns ns ns ns ns nC nC nC nC nC pF pF pF
oC/W oC/W oC/W
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Ambient
tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS RJA
VDD = 15V, ID 10A, R L = 1.5, VGS = 5V, RGS = 6.8 (Figure 15)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge NOTES: 2. 50oC/W measured using FR-4 board with 0.76 in2 footprint at 10 seconds. 3. 177.3oC/W measured using FR-4 board with 0.0115 in2 footprint at 1000 seconds.
©2003 Fairchild Semiconductor Corporation HUF76131SK8 Rev. B1
SYMBOL VSD t rr QRR ISD = 10A ISD = 2.3A
TEST CONDITIONS
MIN -
TY P -
M AX 1.25 1.1 57 81
UNITS V V ns nC
ISD = 2.3A, dISD/dt = 100A/µs ISD = 2.3A, dISD/dt = 100A/µs
HUF76131SK8 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 1 25 150 TA , AMBIENT TEMPERATURE (oC) ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 25 50 75 1 00 125 150 TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
10
THER MAL IMPEDANCE
ZJA, NORMALIZED
1
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM
0.1
t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/ t2 PEAK TJ = PDM x Z JA x RJA + TA 10-2 1 0-1 1 00 101 1 02 10 3
SINGLE PULSE 0.001 10 -5 10-4 10 -3
t , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
50 0
TJ = MAX RATED TA = 25oC
1 000
TRANSCONDUCTAN CE MAY LIMIT CURRENT IN THIS REGION
10 0 100µs
IDM, PEAK CURRENT (A)
ID, DRAIN CURRENT (A)
100
VGS = 5V
10
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
1ms
10
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 150 - TA 125 TA = 25oC 1 0-1 t , PULSE WIDTH (s) 10-2 1 00 10 1
10 ms VDSS(MAX) = 30V 1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100
1 10-5
10 -4
10 -3
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. P EAK CURRENT CAPABILITY
©2003 Fairchild Semiconductor Corporation
HUF76131SK8 Rev. B1
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