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Details, datasheet, quote on part number:HUF76132P3
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Datasheet text preview:
HUF76132P3, HUF76132S3S
D a t a Sheet J anu a r y 2003
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76132.
Features
· Logic Level Gate Drive · 75A, 30V · Ultra Low On-Resistance, rD S(O N) = 0.011 · Temperature Compensating PSPICE® Model · Temperature Compensating SABER© Model · Thermal Impedance SPICE Model · Thermal Impedance SABER Model · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HUF76132P3 HUF76132S3S PA CKAGE TO-220AB TO-263AB BRAND 76132P 76132S
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
HUF76132P3, HUF76132S3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 30 30 ±20 75 44 41 Figure 4 Figures 6, 17, 18 120 0.97 -40 to 150 300 260 W W/oC
oC oC oC
V V V A A A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TA = 25oC, Unless Otherwise Specified SYMBOL TE ST CONDITIONS MIN TYP MA X UNITS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, VGS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150oC
30 -
-
1 250 ±100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS , ID = 250µA (Figure 11) ID = 75A, VGS = 10V (Figure 9, 10) ID = 44A, VGS = 5V (Figure 9) ID = 41A, VGS = 4.5V (Figure 9)
1 -
0.0085 0.013 0.015
3 0.011 0.016 0.018
V
THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 41A, RL = 0.366, VGS = 4.5V, RGS = 6.2 (Figures 15, 21, 22) 17 105 33 42 185 113 ns ns ns ns ns ns R JC RJA (Figure 3) TO-220, TO-262 and TO-263 1.03 62
oC/W oC/W
©2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
HUF76132P3, HUF76132S3S
Electrical Specifications
PARAMETER SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) 1650 850 200 pF pF pF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V, ID 44A, RL = 0.341 Ig(REF) = 1.0mA (Figures 14, 19, 20) 44 25 1.8 4.80 13.50 52 30 2.2 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 75A, RL = 0.20, VGS = 10V, RGS = 6.8 (Figures 16, 21, 22) 11 37 65 42 72 160 ns ns ns ns ns ns TA = 25oC, Unless Otherwise Specified (Continued) SYMBOL TE ST CONDITIONS MIN TYP MA X UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge S YMBOL VSD trr QRR ISD = 44A ISD = 44A, dISD/dt = 100A/µs ISD = 44A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP M AX 1.25 71 104 UNITS V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
80 VGS = 10V ID, DRAIN CURRENT (A) 60
0.8 0.6 0.4 0.2 0 0 25 50 75 100 1 25 150 TA , AMBIENT TEMPERATURE (oC)
40 VGS = 4.5V
20
0 25 50 75 10 0 125 15 0 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
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