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Details, datasheet, quote on part number:HUF76132SK8
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Datasheet text preview:
HUF 76132S K8
Data Sheet January 2003
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76131.
Features
· Logic Level Gate Drive · 11.5A, 30V · Simulation Models - Temperature Compensated PSPICE® and SABER³TM Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve · Transient Thermal Impedance Curve vs Board Mounting Area · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HUF76132SK8 PA CKAGE MS-012A A BRAND 76132SK8
Symbol
SOURCE(1)
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76132SK8T.
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5 1 2 3 4
©2003 Fairchild Semiconductor Corporation
HUF76132SK8 Rev. B1
HUF76132SK8
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 30 30 ±20 11.5 3.3 3.2 Figure 4 Figures 6, 17, 18 2.5 20 -55 to 150 300 260 W mW/oC
oC oC oC
V V V A A A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. TJ = 25oC to 125oC. 2. 50oC/W measured using FR-4 board with 0.76 in2 copper pad at 10 second. 3. 189oC/W measured using FR-4 board with 0.0115 in2 copper pad at 1000 seconds. TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP M AX UNITS
Electrical Specifications
PA RAMETER OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, V GS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150oC
30 -
-
1 250 ±100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
IGSS
VGS = ±20V
VGS(TH) r DS(ON)
VGS = VDS, ID = 250µA (Figure 11) ID = 11.5A, V GS = 10V (Figures 9, 10) ID = 3.3A, VGS = 5V (Figure 9) ID = 3.2A, VGS = 4.5V (Figure 9)
1 -
0.0105 0.0125 0.013
3 0.0115 0.015 0.016
V
THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.76 in2 (Note 2) Pad Area = 0.054 in2 (Figure 23) Pad Area = 0.0115 in2 (Figure 23) SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 3.2A, RL = 4.7, VGS = 4.5V, RGS = 6.8 (Figures 15, 21, 22) 18 36 45 30 80 115 ns ns ns ns ns ns 50 152 189
oC/W oC/W oC/W
©2003 Fairchild Semiconductor Corporation
HUF76132SK8 Rev. B1
HUF76132SK8
Electrical Specifications
PA RAMETER SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS C RSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) 1560 735 150 pF pF pF Qg(TOT) Q g (5 ) Qg(TH) Qgs Qgd VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V, ID 3.3A, RL = 4.5 Ig(REF) = 1.0mA (Figures 14, 19, 20) 43 24 1.63 4 10 52 29 1.95 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 11.5A, RL = 1.3, VGS = 10V, RGS = 6.8 (Figures 16, 21, 22) 10 36 65 37 70 155 ns ns ns ns ns ns TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP M AX UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD TE ST CONDITIONS ISD = 11.5A ISD = 3.3A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 3.3A, dISD/dt = 100A/µs ISD = 3.3A, dISD/dt = 100A/µs MIN TY P M AX 1.25 1.1 58 87 UNITS V V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 1 25 150 TA , AMBIENT TEMPERATURE (oC) 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) 12 VGS = 10V, RJA = 50 oC/W 9
ID, DRAIN CURRENT (A)
6
3 VGS = 4.5V, RJA = 189 oC/W
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76132SK8 Rev. B1
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