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Details, datasheet, quote on part number:HUFA75639S3S
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Datasheet text preview:
HUFA75639G3, HUFA75639P3, HUFA75639S3S
Data Sheet December 2001
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639.
Features
· 56A, 100V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve · Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER HUF A75639G 3 HUF A75639P 3 HUF A75639S 3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75639G 75639P 75639S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE D RAIN (FLANGE)
JEDEC TO-220AB
SOU RCE DRAIN GATE
DRAIN (TAB)
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75639G3, HUFA75639P3, HUFA75639S3S Rev. B
HUFA75639G3, HUFA75639P3, HUFA75639S3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 100 100 ± 20 56 F i gure 4 Figures 6, 14, 15 200 1.35 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MI N TYP MA X UNITS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250µA, VGS = 0V (Figure 11) VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC
100 -
-
1 25 0 ± 100
V µA µA nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 56A, VGS = 10V (Figure 9)
2 -
0. 021
4 0.025
V
RJC RJA
(Figure 3) TO-247 TO-220, TO-263
-
-
0. 74 30 62
oC/W oC/W oC/W
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 50V, ID 56A, RL = 0.89 Ig(REF) = 1.0mA (Figure 13) 9. 8 24 nC nC 110 57 3. 7 13 0 75 4.5 nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 50V, ID 56A, RL = 0.89, VGS = 10V, RGS = 5.1 15 60 20 25 11 0 70 ns ns ns ns ns ns
©2001 Fairchild Semiconductor Corporation
HUFA75639G3, HUFA75639P3, HUFA75639S3S Rev. B
HUFA75639G3, HUFA75639P3, HUFA75639S3S
Electrical Specifications
PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 200 0 500 65 pF pF pF TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MI N TYP MA X UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL VSD trr QRR ISD = 56A ISD = 56A, dISD/dt = 100A/µs ISD = 56A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP MA X 1. 2 5 110 320 UNITS V ns nC
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
2 1 ZJC, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
0.1
SINGLE PULSE 0.01 10-5 10-4 10-3
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
ID, DRAIN CURRENT (A)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
HUFA75639G3, HUFA75639P3, HUFA75639S3S Rev. B
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