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Details, datasheet, quote on part number:HUFA75823D3S
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Datasheet text preview:
HUFA75823D3, HUFA75823D3S
Da ta Sheet D ec e m be r 2001
14A, 150V, 0.150 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
D RAIN (FLANGE)
Features
· Ultra Low On-Resistance - rDS(ON) = 0.150, VGS = 10V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve
SOURC E DRAI N GATE GATE SOURCE DRAI N (FLANGE)
HUFA75823D3
HUFA75823D3S
Symbol
D
Ordering Information
PART NUMBER HUF A75823D 3 PACKAGE TO-251AA TO-252AA BRAND 75823D 75823D
G
HUF A75823D 3S
S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75823D3ST. TC = 25oC, Unless Otherwise Specified HUFA75823D3, HUFA75823D3S UNITS V V V A A 150 150 ±20 14 10 Figure 4 Figures 6, 14, 15 85 0. 57 -55 to 175 300 260 W W/oC
oC oC oC
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75823D3, HUFA75823D3S Rev. B
HUFA75823D3, HUFA75823D3S
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-251 and TO-252 1. 76 100
oC/W oC/W
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
150 -
-
1 250 ± 100
V µA µA nA
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 14A, VGS = 10V (Figure 9)
2 -
0.125
4 0.150
V
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 800 180 65 pF pF pF Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 75V, ID = 14A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 43 23 1.5 3.4 8.8 54 29 1.9 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 75V, ID = 14A VGS = 10V, RGS = 12 (Figures 18, 19) 7.7 24 45 26 48 105 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 14A ISD = 7A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 14A, dISD/dt = 100A/µs ISD = 14A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1. 00 150 750 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA75823D3, HUFA75823D3S Rev. B
HUFA75823D3, HUFA75823D3S Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER 15
1.0
ID, DRAIN CURRENT (A)
12 VG S = 10V 9
0.8 0.6 0.4 0.2 0
6
3
0
25
50
75
100
125
150
175
0 25
50
75
1 00
12 5
1 50
1 75
TC , CASE TEMPERATURE (o C)
TC , CASE TEMPERATURE (o C )
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1
THERMAL IMPEDANCE ZJC , NORMALIZED
D U TY CYCLE - DESCENDING ORDER 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM
0.1 t1 t2 N OTE S: D U TY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 0 -3 1 0 -2 t , RECTANGULAR PULSE DURATION (s) 1 0 -1 10 0 10 1
S IN G LE PULSE 0 .01 1 0 -5 10 -4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
IDM, PEAK CURRENT (A)
100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 VGS = 10V
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA75823D3, HUFA75823D3S Rev. B
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