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Details, datasheet, quote on part number:HUFA75831SK8
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| Part: | HUFA75831SK8 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | 3a, 150v, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download HUFA75831SK8 datasheet File size : 257 kB |
| Request For quote: | Find where to buy HUFA75831SK8
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Datasheet text preview:
HUF A75831SK 8
Da ta Sheet D ec e m be r 2001
3A, 150V, 0.095 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC MS-012AA
BRANDING DASH
Features
· Ultra Low On-Resistance - rDS(ON) = 0.095, VGS = 10V
5
1 2 3 4
· Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve
Symbol
SOURCE (1) SOURCE (2) SOURCE (3) GATE (4) DRAIN (8) DRAIN (7) DRAIN (6) DRAIN (5)
· UIS Rating Curve
Ordering Information
PART NUMBER HUFA75831SK8 PACKAGE MS -012AA BRAND 75831SK 8
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75831SK8T.
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified HUFA75831SK8 UNITS V V V A A 150 150 ± 20 3 2 F i gure 4 Figures 6, 14, 15 2.5 20 -55 to 150 300 260 W mW/oC
oC oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 125oC. 2. 50oC/W measured using FR-4 board with 0.76 in 2 (490.3 mm2) copper pad at 10 second. 3. 152oC/W measured using FR-4 board with 0.054 in 2 (34.8 mm2) copper pad at 1000 seconds 4. 189oC/W measured using FR-4 board with 0.0115 in 2 (7.42 mm2) copper pad at 1000 seconds
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75831SK8 Rev. B
HUFA75831SK8
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TA = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.76 in2 (490.3 mm2) (Note 2) Pad Area = 0.054 in2 (34.8 mm2) (Note 3) Pad Area = 0.0115 in2 (7.42 mm2)(Note 4) SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 1175 275 72 pF pF pF Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 75V, ID = 3A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 66 35 2.4 4.3 11 80 42 2.9 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 75V, ID = 3A VGS = 10V, RGS = 4.7 (Figures 18, 19) 11 6 40 9 25 75 ns ns ns ns ns ns 50 152 189
oC/W oC/W oC/W
TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
150 -
-
1 250 ± 100
V µA µA nA
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 3A, VGS = 10V (Figure 9)
2 -
0.079
4 0.095
V
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 3A ISD = 1.5A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 3A, dISD/dt = 100A/µs ISD = 3A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1. 00 132 380 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA75831SK8 Rev. B
HUFA75831SK8 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 3 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) 150 4 VGS = 10V, RJA = 50oC/W
2
1
0
25
50
75
100
125
150
TA , AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
3 1 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-2 10-1 100 101 102 103
RJA = 50oC/W
0.1
0.01
SINGLE PULSE 0.001 10-5 10-4 10-3
t , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500 RJA = 50oC/W IDM, PEAK CURRENT (A) 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 5 VGS = 10V 10 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 1 10-5 10-4 10-3 10-2 10-1 t , PULSE WIDTH (s) 100 101 102 103 150 - TA 125
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA75831SK8 Rev. B
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