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Details, datasheet, quote on part number:HUFA75842P3
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Datasheet text preview:
HUFA75842P3, HUFA75842S3S
Da ta Sheet D ec e m be r 2001
43A, 150V, 0.042 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-220AB
SOU RCE DRAIN GATE
JEDEC TO-263AB
Features
DRA IN (FLANGE)
· Ultra Low On-Resistance - rDS(ON) = 0.042, VGS = 10V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve
GATE SOURCE DRAIN (FLANGE)
HUFA75842P3
HUFA75842S3S
Symbol
D
· UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75842P 75842S HUF A75842P 3 HUF A75842S 3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75842S3ST.
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HUFA75842P3 UNITS V V V A A 150 150 ± 20 43 30 F i gure 4 Figures 6, 14, 15 230 1.53 -55 to 175 300 260 W W/oC
oC oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75842P3, HUFA75842S3S Rev. B
HUFA75842P3, HUFA75842S3SS
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220, TO-263 0. 65 62
oC/W oC/W
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
150 -
-
1 250 ± 100
V µA µA nA
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 43A, VGS = 10V (Figure 9)
2 -
0.035
4 0.042
V
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 2730 660 230 pF pF pF Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 75V, ID = 43A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 144 77 5.6 12 30 175 90 6.7 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 75V, ID = 43A VGS = 10V, RGS = 3.9 (Figures 18, 19) 13 53 47 34 100 120 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 43A ISD = 22A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 43A, dISD/dt = 100A/µs ISD = 43A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1. 00 190 1. 08 UNITS V V ns µC
©2001 Fairchild Semiconductor Corporation
HUFA75842P3, HUFA75842S3S Rev. B
HUFA75842P3, HUFA75842S3S Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 40 VGS = 10V 30 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 50
20
10
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
600 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 5 175 - TC 150 100 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 30 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
IDM, PEAK CURRENT (A)
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA75842P3, HUFA75842S3S Rev. B
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