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Details, datasheet, quote on part number:HUFA75852G3
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Datasheet text preview:
HU FA75 852G3
Da ta Sheet D ec e m be r 2001
75A, 150V, 0.016 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
· Ultra Low On-Resistance - rDS(ON) = 0.016, VGS = 10V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve
DRAIN (TAB)
Symbol
D
Ordering Information
PART NUMBER HUFA75852G3
G
PACKAGE TO-247
BRAND 75852G
S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HUF A75852G 3 UNITS V V V A A 150 150 ± 20 75 75 F i gure 4 Figures 6, 14, 15 500 3.33 -55 to 175 300 260 W W/oC
oC oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA75852G3 Rev. B
HUFA75852G3
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA T O -247 0. 30 30
oC/W oC/W
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
150 -
-
1 250 ± 100
V µA µA nA
IGSS
VGS = ±20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250µA (Figure 10) ID = 75A, VGS = 10V (Figure 9)
2 -
0.013
4 0.016
V ¾
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 7690 1650 535 pF pF pF Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 75V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 400 215 15 25 66 480 260 17. 5 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 75V, ID = 75A VGS = 10V, RGS = 2.0 (Figures 18, 19) 22 151 82 107 260 285 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 75A ISD = 35A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1. 00 260 1830 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA75852G3 Rev. B
HUFA75852G3 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) 80
ID, DRAIN CURRENT (A)
60 VGS = 10V 40
20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
0.1 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100
SINGLE PULSE 0.01 10-5 10-4
t1 t2 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000 TC = 25oC IDM , PEAK CURRENT (A) 1000 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 VGS = 10V 175 - TC 150
100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
50 10-5
FIGURE 4. PEAK CURRENT CAPABILIT Y
©2001 Fairchild Semiconductor Corporation
HUFA75852G3 Rev. B
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