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Details, datasheet, quote on part number:HUFA76404DK8T
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Datasheet text preview:
HUFA76404DK8T
July 2004
HUFA76404DK8T
N-Channel MOSFET 62V, 3.2A, 132m
Features
· rDS(ON) = 110m (Typ.), VGS = 5V, ID = 3.2A · Qg(tot) = 3.6nC (Typ.), VGS = 5V · Low Miller Charge · Low QRR Body Diode · Optimized efficiency at high frequencies · UIS Capability (Single Pulse and Repetitive Pulse) · Internal RG = 100 · Qualified to AEC Q101
Applications
· Motor / Body Load Control · ABS Systems · Powertrain Management · Injection Systems · DC-DC converters and Off-line UPS · Distributed Power Architectures and VRMs · Primary Switch for 12V and 24V systems
Branding Dash
SOURCE 1 (1) GATE 1 (2) 5
DRAIN 1 (8) DRAIN 1 (7) DRAIN 2 (6) DRAIN 2 (5)
1 2 3 4
SOURCE 2 (3) GATE 2 (4)
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
S ymb o l VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 50oC/W) Continuous (TA = 25oC, VGS = 5V, RJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 3. 6 3.2 F i gure 4 392 2. 5 20 -55 to 150 A A A mJ W mW/oC
o
Ratings 62 ± 20
Units V V
C
Thermal Characteristics
RJA RJA RJA Pad Area = 0.50 in2 (323 mm2) (Note 2) Pad Area = 0.027 in2 (17.4 mm2) (Note 3) Pad Area = 0.006 in2 (3.87 mm2) (Note 4) 50 170 183
o
C/W C/W
oC/W o
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. A1
HUFA76404DK8T
Package Marking and Ordering Information
Device Marking 76404DK 8 Devi ce HUFA76404DK8T Package SO -8 Reel Size 330m m Tape Width 12mm Quantity 2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol P a r a m e te r Test Conditions Min Typ Ma x Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TA = 150oC VGS = ±20V 62 1 25 0 ± 100 V µA nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 3.6A, VGS = 10V ID = 3.2A, VGS = 5V 1 0. 088 0.110 3 0.110 0. 132 V
Dynamic Characteristics
CISS COSS CRSS RG Qg(tot) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge (VGS = 10V) VDD = 30V, ID = 3.6A VGS = 10V, RGS = 47 13 26 145 53 65 330 ns ns ns ns ns ns VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 3.6A Ig = 1.0mA 250 80 7 100 3.8 0.3 0.8 0.5 1.7 4.9 0.4 pF pF pF nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 3.6A ISD = 1.8A ISD= 3.6A, dISD/dt= 100A/µs ISD= 3.6A, dISD/dt= 100A/µs 1.25 1. 0 37 38 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 94mH, IAS = 2.9A. 2: 50oC/W measured using FR-4 board with 0.50 in2 (323 mm2) copper pad at 1 second. 3: 170oC/W measured using FR-4 board with 0.027 in2 (17.4 mm2) copper pad at 1000 seconds. 4: 183oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
©2004 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. A1
HUFA76404DK8T
Typical Characteristics TA = 25°C unless otherwise noted
1.2 POWER DISSIPATION MULTIPLIER 4
1.0 ID, DRAIN CURRENT (A) 3
VGS = 10V
0.8
0.6
2
VGS = 5V
0.4
1 RJA=50oC/W 0
0.2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TA , AMBIENT TEMPERATURE (oC)
TA, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 ZJA, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
RJA=50oC/W
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 100 101 102 103
0.01 10- 5 10-4 10-3 10-2 10-1 t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
200 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 5V 10 VGS = 10V 3 10-5 10- 4 10-3 10-2 10- 1 t , PULSE WIDTH (s) 100 101 102 103 150 - TA 125
100 IDM, PEAK CURRENT (A)
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. A1
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