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Details, datasheet, quote on part number:HUFA76407D3S
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Datasheet text preview:
HUFA76407D3, HUFA76407D3S
Data Sheet De c e m b e r 2001
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging
JEDEC TO-251AA
DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
Features
· Ultra Low On-Resistance - rDS(ON) = 0.092, VGS = 10V - rDS(ON) = 0.107, VGS = 5V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve · Switching Time vs RGS Curves
HUFA76407D3
HUFA76407D3S
Symbol
D
G
Ordering Information
S
PART NUMBER HUFA76407D3 HUFA76407D3S
PACKAGE TO-251AA TO-252AA
BRAND 76407D 76407D
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 135oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 135oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA76407D3, HUFA76407D3S 60 60 ±16 11 12 6 6 Figure 4 Figures 6, 14, 15 38 0.25 -55 to 175 300 260
UNITS V V V A A A A
W W/oC oC
oC oC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
©2001 Fairchild Semiconductor Corporation
HUFA76407D3, HUFA76407D3S Rev. B
HUFA76407D3, HUFA76407D3S
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V , TC = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA (Figure 11) ID = 13A, VGS = 10V (Figures 9, 10) ID = 8A, VGS = 5V (Figure 9) ID = 8A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-251, TO-252 3.94 100
oC/W oC/W
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
60 55 -
-
1 250 ±100 3 0.092 0.107 0.117
V V µA µA nA
VGS = ±16V
1 -
0.077 0.095 0.107
V
SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30V, ID = 13A VGS = 10V, RGS = 32 (Figures 16, 21, 22) VDD = 30V, ID = 8A VGS = 4.5V, RGS = 32 (Figures 15, 21, 22) 8 105 22 39 170 92 ns ns ns ns ns ns
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Reverse Transfer Capacitance CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance 350 105 23 pF pF pF 9.4 5.2 0.36 1.2 2.5 11.3 6.2 0.43 nC nC nC nC nC 5 32 43 45 56 132 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD trr QRR ISD =8A ISD = 3A Reverse Recovery Time Reverse Recovered Charge
©2001 Fairchild Semiconductor Corporation
TEST CONDITIONS
MIN -
TYP -
MAX 1.25 1.0 66 159
UNITS V V ns nC
ISD = 8A, dISD/dt = 100A/µs ISD = 8A, dISD/dt = 100A/µs
HUFA76407D3, HUFA76407D3S Rev. B
HUFA76407D3, HUFA76407D3S Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) 10 VGS = 4.5V 15
VGS = 10V
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
IDM, PEAK CURRENT (A)
100
VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA76407D3, HUFA76407D3S Rev. B
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