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Details, datasheet, quote on part number:HUFA76407DK8T
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Datasheet text preview:
HUFA76407DK8
Da ta Sheet D ec e m be r 2001
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET® Power MOSFET Packaging
JEDEC MS-012AA
BRANDING DASH
Features
· Ultra Low On-Resistance - rDS(ON) = 0.090, VGS = 10V - rDS(ON) = 0.105, VGS = 5V
5
1 2 3 4
· Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve
Symbol
SOURCE1 (1) GATE1 (2) DRAIN 1 (8) DRAIN 1 (7)
· Transient Thermal Impedance Curve vs Board Mounting Area · Switching Time vs RGS Curves
SOURCE2 (3) GATE2 (4)
DRAIN 2 (6) DRAIN 2 (5)
Ordering Information
PART NUMBER HUF A76407D K8 PACKAGE MS -012A A BRAND 76407DK 8
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76407DK8T.
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified HUF A76407DK8 60 60 ± 16 3. 5 3. 8 1. 0 1. 0 F i gure 4 Figures 6, 17, 18 2. 5 20 -55 to 150 300 260 UNITS V V V A A A A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA = 25oC, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100oC, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 125oC. 2. 50oC/W measured using FR-4 board with 0.76 in 2 (490.3 mm2) copper pad at 1 second. 3. 228oC/W measured using FR-4 board with 0.006 in 2 (3.87 mm2) copper pad at 1000 seconds.
W mW/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA76407DK8 Rev. B
HUFA76407DK8
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V , T A = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TA = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA (Figure 11) ID = 3.8A, V GS = 10V (Figures 9, 10) ID = 1.0A, V GS = 5V (Figure 9) ID = 1.0A, V GS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.76 in2 (490.3 mm2) (Note 2) Pad Area = 0.027 in2 (17.4 mm2) (Figure 23) Pad Area = 0.006 in2 (3.87 mm2) (Figure 23) SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V, ID = 1.0A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30V, ID = 3.8A VGS = 10V, RGS = 30 (Figures 16, 21, 22) VDD = 30V, ID = 1.0A VGS = 4.5V, RGS = 27 (Figures 15, 21, 22) 8 30 25 25 57 75 ns ns ns ns ns ns 50 191 228
oC/W oC/W oC/W
TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
60 55 -
-
1 250 ± 100
V V µA µA nA
VGS = ±16V
1 -
0.075 0.088 0.092
3 0.090 0.105 0.110
V
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance 330 100 18 pF pF pF 9.4 5.3 0. 42 1. 05 2.4 11. 2 6.4 0.5 nC nC nC nC nC 5 11 46 31 24 116 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD trr QRR ISD = 3.8A ISD = 1.0A Reverse Recovery Time Reverse Recovered Charge ISD = 1.0A, dISD/dt = 100A/µs ISD = 1.0A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1. 00 48 89 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B
HUFA76407DK8 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) 4 VGS = 10V, RJA = 50oC/W 3
ID, DRAIN CURRENT (A)
2
1 VGS = 4.5V, RJA = 228oC/W
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
2 1 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-2 10-1 100 101 102 103 RJA = 228oC/W
0.1
0.01
SINGLE PULSE 0.001 10-5 10-4 10-3 t , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200 100 IDM, PEAK CURRENT (A)
RJA = 228oC/W
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 5 150 - TA 125
VGS = 5V 10
1
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t , PULSE WIDTH (s) 100 101 102 103
10-5
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B
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