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Details, datasheet, quote on part number:HUFA76407P3
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Datasheet text preview:
HU FA7640 7P3
Da ta Sheet December 2001
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging
JEDEC TO-220AB
SOU RCE DRAIN GATE
Features
· Ultra Low On-Resistance - rDS(ON) = 0.092, VGS = 10V - rDS(ON) = 0.107, VGS = 5V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve
DRAIN (FLANGE)
HUFA76407P3
Symbol
D
· UIS Rating Curve · Switching Time vs RGS Curves
G
Ordering Information
S
PART NUMBER HUF A76407P 3
PACKAGE TO-220AB
BRAND 76407P
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HUFA76407P3 UNITS V V V A A A A 60 60 ± 16 12 13 6 6 F i gure 4 Figures 6, 17, 18 38 0.25 -55 to 175 300 260 W W/oC
oC oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 135oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 135oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3
]
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
Drain to Source Breakdown Voltage
BVDSS IDSS IGSS VGS(TH) rDS(ON)
ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V , T C = -40oC (Figure 12) VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = ±16V VGS = VDS, ID = 250µA (Figure 11) ID = 13A, VGS = 10V (Figures 9, 10) ID = 8A, VGS = 5V (Figure 9) ID = 8A, VGS = 4.5V (Figure 9)
60 55 -
-
1 250 ± 100
V V µA µA nA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
1 -
0.077 0.095 0.107
3 0.092 0.107 0.117
V
oC/W oC/W
THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA T O -220 3. 94 62
SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30V, ID = 13A VGS = 10V, RGS = 32 (Figures 16, 21, 22) VDD = 30V, ID = 8A VGS = 4.5V, RGS = 32 (Figures 15, 21, 22) 8 105 22 39 170 92 ns ns ns ns ns ns
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance 350 105 23 pF pF pF 9.4 5.2 .36 1.2 2.5 11. 3 6.2 .43 nC nC nC nC nC 5 32 43 45 56 132 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD trr QRR ISD = 8A ISD = 4A Reverse Recovery Time Reverse Recovered Charge ISD = 8A, dISD/dt = 100A/µs ISD = 8A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1.0 66 159 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
HUFA76407P3 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) 10 VGS = 4.5V 15
VGS = 10V
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 175 - TC 150
IDM, PEAK CURRENT (A)
100
VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B
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