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Details, datasheet, quote on part number:HUFA76413DK8T
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| Part: | HUFA76413DK8T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level UltraFET Power MOSFET 60v, 4.8a, 56m |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download HUFA76413DK8T datasheet File size : 276 kB |
| Request For quote: | Find where to buy HUFA76413DK8T
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Datasheet text preview:
HUFA76413DK8T
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56m
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Applications
· Motor and Load Control · Powertrain Management
Features
· · · · 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056, VGS = 5V
D1 (7) D2 (6) D2 (5)
D1 (8)
1
SO-8
S1 (1) G1 (2) S2 (3) G2 (4)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
S ymb o l VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 125oC, VGS = 5V, R JA = 228oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 5. 1 4. 8 1 F i gure 4 260 2. 5 0.02 -55 to 150 A A A A mJ W W /oC
oC
Ratings 60 ±16
Units V V
Thermal Characteristics
RJA RJA RJA Thermal Resistance Junction to Ambient SO-8 (Note 2) Thermal Resistance Junction to Ambient SO-8 (Note 3) Thermal Resistance Junction to Ambient SO-8 (Note 4) 50 19 1 22 8
o o
C/W C/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation Rev. B
HUFA76413DK8T
Package Marking and Ordering Information
Device Marking 76413DK 8 Devi ce HUFA76413DK8T Package SO -8 Reel Size 330m m Tape Width 12mm Quantity 2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol P a r a m e te r Test Conditions Min Typ Ma x Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V VGS = ±16V TA = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 5.1A, VGS = 10V Drain to Source On Resistance ID = 4.8A, VGS = 5V ID = 4.8A, VGS = 5V TA = 150oC 1 0. 041 0. 048 0. 091 3 0. 049 0. 056 0. 106 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge (VGS = 5V) VDD = 30V, ID = 1A VGS = 5V, RGS = 16 10 19 45 27 44 108 ns ns ns ns ns ns VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 4.8A Ig = 1.0mA 620 180 30 18 10 0.6 1.8 5 23 13 0.8 pF pF pF nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 4.8A ISD = 2.4A ISD = 4.8A, dISD/dt = 100A/µs ISD = 4.8A, dISD/dt = 100A/µs 1.25 1. 0 43 55 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 20mH, IAS = 5.1A 2: RJA is 50 oC/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second. 3: RJA is 191 oC/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds. 4: RJA is 228 oC/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds.
©2003 Fairchild Semiconductor Corporation
Rev. B
HUFA76413DK8T
Typical Characteristics TA = 25°C unless otherwise noted
1.2 6
POWER DISSIPATION MULTIPLIER
1.0 0.8 -ID, DRAIN CURRENT (A)
VGS = 10V, RJA=50oC/W 4
0.6 0.4
2
0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC)
VGS = 5V, RJA=228oC/W 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150
Figure 1. Normalized Power Dissipation vs Ambient Temperature
4 1 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
RJA=50oC/W
0.1
PDM VGS = 10V 0.01 t1 t2 SINGLE PULSE 0.001 10-5 10-4 10-3 10-2 10-1 100 t , RECTANGULAR PULSE DURATION (s) NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 101 102 103
Figure 3. Normalized Maximum Transient Thermal Impedance
300 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 5V RJA=50oC/W TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TA 150
IDM, PEAK CURRENT (A)
100
10
VGS = 10V
2 10-5 10-4 10-3 10-2 10- 1 t , PULSE WIDTH (s) 100 101 102 103
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
Rev. B
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