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Details, datasheet, quote on part number:HUFA76423D3S
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Datasheet text preview:
HUFA76423D3, HUFA76423D3S
Da ta Sheet D ec e m be r 2001
20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
· Ultra Low On-Resistance - rDS(ON) = 0.032, VGS = 10V - rDS(ON) = 0.037, VGS = 5V · Simulation Models - Temperature Compensated PSPICE® and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com · Peak Current vs Pulse Width Curve · UIS Rating Curve
DRAI N (FLANGE)
SOURCE DRAIN GATE GATE SO URCE
DRAIN (FLANGE)
HUFA76423D3
HUFA76423D3S
Symbol
D
· Switching Time vs RGS Curves
Ordering Information
PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76423D 76423D HUF A76423D 3 HUF A76423D 3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76423D3ST. TC = 25oC, Unless Otherwise Specified HUFA76423D3, HUFA76423D3S 60 60 ± 16 20 20 20 20 F i gure 4 Figures 6, 17, 18 85 0. 567 -55 to 175 300 260 UNITS V V V A A A A
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 150oC.
W W/oC
oC oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUFA76423D3, HUFA76423D3S Rev. B
HUFA76423D3, HUFA76423D3S
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V , T C = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA (Figure 11) ID = 20A, VGS = 10V (Figures 9, 10) ID = 20A, VGS = 5V (Figure 9) ID = 20A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-251 and TO-252 1. 76 100
oC/W oC/W
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TY P M AX UNITS
60 55 -
-
1 250 ± 100
V V µA µA nA
VGS = ±16V
1 -
0.027 0.031 0.033
3 0.032 0.037 0.040
V
SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V, ID = 20A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30V, ID = 20A VGS = 10V, RGS = 10 (Figures 16, 21, 22) VDD = 30V, ID = 20A VGS = 4.5V, RGS = 10 (Figures 15, 21, 22) 12 145 27 50 240 120 ns ns ns ns ns ns
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1060 315 65 pF pF pF 28 16 1.2 3.5 7 34 20 1.5 nC nC nC nC nC 7 35 52 50 65 155 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD trr QRR ISD = 20A ISD = 10A Reverse Recovery Time Reverse Recovered Charge ISD = 20A, dISD/dt = 100A/µs ISD = 20A, dISD/dt = 100A/µs TEST CONDITIONS MI N TYP M AX 1. 25 1.0 90 225 UNITS V V ns nC
©2001 Fairchild Semiconductor Corporation
HUFA76423D3, HUFA76423D3S Rev. B
HUFA76423D3, HUFA76423D3S Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 25 VGS = 10V
ID, DRAIN CURRENT (A)
20
15
VGS = 4.5V
10
5
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0. 5 0. 2 0. 1 0. 05 0. 02 0. 01 PD M 0 .1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 0- 3 1 0 -2 t , RECTANGULAR PULSE DURATION (s) 10 - 1 10 0 10 1
SIN GLE PULSE 0. 01 1 0 -5 10 - 4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)
100
I = I 25
175 - TC 150
VGS = 10V VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
10
10-5
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUFA76423D3, HUFA76423D3S Rev. B
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