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Details, datasheet, quote on part number:IRF550A
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| Part: | IRF550A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 100V N-channel A-FET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download IRF550A datasheet File size : 268 kB |
| Request For quote: | Find where to buy IRF550A
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Datasheet text preview:
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature
IRF550A
BVDSS = 100 V RDS(on) = 0.04 ID = 40 A
TO-220
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Value 100 40 28.3
1 O
Units V A A V mJ A mJ V/ns W W/ C
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C)
160 + 20 _ 640 40 16.7 6.5 167 1.11 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
C
300
Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF550A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------27.44 420 185 17 20 80 45 75 13.2 34.8 --4.0 100 -100 10 100 0.04 -485 215 50 50 160 100 97 --nC ns V V/ C
Test Condition VGS=0V,ID=250 µA ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C
V nA µA pF
VGS=10V,ID=20A VDS=40V,ID=20A
4 O 4 O
1750 2270
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=40A, RG=6.2 See Fig 13 VDS=80V,VGS=10V, ID=40A See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------135 0.65 40 160 1.6 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=40A,VGS=0V
TJ=25 C ,IF=40A
diF/dt=100A/ µs
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=0.6mH, I AS=40A, VDD=25V, RG=27 , Starting T J =25ooC 3 _ _ _ O ISD < 40A, di/dt < 470A/ µs, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
[A] [A]
102
VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRF550A
Fig 2. Transfer Characteristics
102
ID , Drain Current
ID , Drain Current
175 oC
10
1
101 25 oC @ Notes : 1. V S = 0 V G - 55 oC 100 3. 250 µs Pulse Test 6 8 10 2. V S = 40 V D
100 10-1 100
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 101
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V] [A] IDR , Reverse Drain Current
12 0 11 0
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
00 .6
Fig 4. Source-Drain Diode Forward Voltage
00 .5
VGS = 10 V
00 .4
00 .3 V S = 20 V G
00 .2
00 .1 @ N t : TJ = 2 oC oe 5 00 .0 0 25 50 75 10 0 15 2 10 5 15 7
1 5 oC 7 2C 5 10 0 04 . 06 . 08 . 10 12 . . 14 . 16 .
o
@Nts: oe 1 VGS = 0 V .
2 2 0 µs P l e T s .5 us et 20 . 22 . 24 26 . . 28 .
18 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Ciss= Cgs+ C d ( Cds= s o t d ) hre g Coss= Cds+ C d g Crss= Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
VDS = 2 V 0 0 VS =5 V D VDS = 8 V 0
30 00 C iss 20 00 C oss @Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
[pF]
VGS , Gate-Source Voltage
1 0
Capacitance
5
10 00
C rss
@Nts:I =00A oe D 4. 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
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