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Details, datasheet, quote on part number:IRF654B
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Datasheet text preview:
IRF654B/IRFS654B
November 2001
IRF654B/IRFS654B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
· · · · · · 21A, 250V, RDS(on) = 0.14 @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G GDS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
I RF 654B 250 21 13.3 84 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
IRFS654B 21 * 13. 3 * 84 * 700 21 15. 6 5.5
Units V A A A V mJ A mJ V/ns W W / °C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
156 1.25 -55 to +150 300
50 0.4
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. IRF654B 0.8 0.5 62. 5 IRFS654B 2.5 -62. 5 Units °C/W °C/W °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
IRF654B/IRFS654B
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 250 ------0.26 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10.5 A VDS = 40 V, ID = 10.5 A
(Note 4)
2.0 ---
-0. 1 23
4. 0 0.14 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---260 0 290 60 34 00 380 80 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200 V, ID = 25 A, VGS = 10 V
(Note 4, 5)
VDD = 125 V, ID = 25 A, RG = 25
(Note 4, 5)
--------
35 195 300 180 95 12 43
80 400 610 370 123 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 21 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 25 A, dIF / dt = 100 A/µs
(Note 4)
------
---300 3.23
21 84 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.54mH, IAS = 21A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 25A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
IRF654B/IRFS654B
Typical Characteristics
ID, Drain Current [A]
10
1
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
150 C 25 C -55 C
Notes : 1. VDS = 40V 2. 250 s Pulse Test
o o
o
10
0
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 10V
IDR, Reverse Drain Current [A]
0.6
0.4
VGS = 20V
10
1
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.2
Note : TJ = 25
0.0
0
20
40
60
80
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
8000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 50V VDS = 125V
VGS, Gate-Source Voltage [V]
6000
8
VDS = 200V
Capacitance [pF]
Ciss
4000
6
Coss
2000
4
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 25 A
0 -1 10
0 10
0
10
1
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
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