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Details, datasheet, quote on part number:IRFI710B
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Datasheet text preview:
IRFW710B / IRFI710B
November 2001
IRFW710B / IRFI710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features
· · · · · · 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
!
G! G S
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFW710B / IRFI710B 400 2. 0 1. 3 6. 0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
100 2. 0 3. 6 5. 5 3.13 36 0.29 -55 to +150 300
TJ, Tstg TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 3. 44 40 62. 5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW710B / IRFI710B
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0. 4 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 1.0 A VDS = 40 V, ID = 1.0 A
(Note 4)
2.0 ---
-2. 7 2. 2
4. 0 3. 4 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---250 30 6. 0 330 40 8. 0 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 2.0 A, VGS = 10 V
(Note 4, 5)
VDD = 200 V, ID = 2.0 A, RG = 25
(Note 4, 5)
--------
6. 0 25 20 25 7. 7 1. 5 3. 2
20 60 50 60 10 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---210 0. 9
2. 0 6. 0 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 44mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 2.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW710B / IRFI710B
Typical Characteristics
10
0
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
0
150 C
o
10
-1
25 C -55 C
o
o
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
10
VGS = 10V
RDS(ON) [ ], Drain-Source On-Resistance
8
VGS = 20V
IDR, Reverse Drain Current [A]
10
0
6
4
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
2
Note : TJ = 25
0
0
1
2
3
4
5
6
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 80V
10
400
VDS = 200V
VGS, Gate-Source Voltage [V]
Capacitance [pF]
300
Ciss
8
VDS = 320V
6
200
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
100
Crss
2
Note : ID = 2.0 A
0 -1 10
10
0
10
1
0 0.0
1.5
3.0
4.5
6.0
7.5
9.0
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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