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Details, datasheet, quote on part number:IRFR220
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Datasheet text preview:
IRFR220, IRFU220
Data Sheet J a nu a r y 2002
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600.
Features
· 4.6A, 200V · rDS(ON) = 0.800 · Single Pulse Avalanche Energy Rated · SOA is Power Dissipation Limited · Nanosecond Switching Speeds · Linear Transfer Characteristics · High Input Impedance · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRFR220 IRFU220 PACKAGE TO-252AA TO-251AA BRAND IFR220 IFU220
Symbol
D
G
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
DRAIN DRAIN (FLANGE)
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFR220, IRFU220 Rev. B
IRFR220, IRFU220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specfied
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFR220, IRFU220 200 200 4.6 2.9 18 ± 20 50 0.4 85 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Drain Lead, 6.0mm (0.25in) From Package to Center of Die Measured From the Source Lead, 6.0mm (0.25in) From Package to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances
D LD G LS S
TEST CONDITIONS ID = 250µA, VGS = 0V, (Figure 10) VGS = VDS , ID = 250µA VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V, (Figure 7) VGS = ±20V ID = 2.4A, VGS = 10V, (Figures 8, 9) VDS 50V, ID = 2.4A, (Figure 12) VDD = 100V, ID 4.6A, RGS = 18 , RL = 18 , VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 4.6A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA, (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
MIN 200 2.0 4.6 1.7 -
TYP 0.47 2.6 8.8 27 21 14 12 2.3 4.5 330 120 41 4.5
MAX 4.0 25 250 ±100 0.800 13 41 32 21 18 3.4 6.8 -
UNITS V V µA µA A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
LS
-
7.5
-
nH
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
RJC RJA Typical Solder Mount
-
-
2.5 110
oC/W oC/W
©2002 Fairchild Semiconductor Corporation
IRFR220, IRFU220 Rev. B
IRFR220, IRFU220
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D
MIN -
TYP -
MAX 4.6 18
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 4.6A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs
69 0.30
170 0.72
1.8 400 1.8
V ns µC
2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50, peak IAS = 4.6A.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
5
0.8 0.6 0.4 0.2 0
ID , DRAIN CURRENT (A)
4
3
2
1
0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
10
ZJC , TRANSIENT THERMAL IMPEDANCE
0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (S) 1 10 PDM
10-2 10-5
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFR220, IRFU220 Rev. B
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