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Part: IRFRU110A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Advanced Power MOSFET: 100v, 4.7a
Company: Fairchild Semiconductor
Datasheet: Download IRFRU110A datasheet File size : 173 kB
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Datasheet text preview:
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)
IRFR/U110A
BVDSS = 100 V RDS(on) = 0.4 ID = 4.7 A
D-PAK
2 1 3 1
I-PAK
2
3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C )
1. Gate 2. Drain 3. Source
Value 100 4.7 3
1 O
Units V A A V mJ A mJ V/ns W W W/ C
Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) *
19 + 20 _ 59 4.7 2 6.5 2.5 20 0.16 - 55 to +150
O 1 O 1 O 3 O
2
Total Power Dissipation (TC=25 C )
Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
C
300
Thermal Resistance
Symbol R JC R JA R JA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 6.26 50 110
Units
C /W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFR/U110A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------3.23 190 55 21 10 14 28 18 8.5 1.6 4.1 --4.0 100 -100 10 100 0.4 -240 65 25 30 40 70 50 12 --nC ns pF V
Test Condition
VGS=0V,ID=250 µ A See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µ A V nA µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=125 C
VGS=10V,ID=2.35A VDS=40V,ID=2.35A
4 O 4 O
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=5.6A, RG=24 See Fig 13 VDS=80V,VGS=10V, ID=5.6A See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------85 0.23 4.7 19 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=4.7A,VGS=0V
TJ=25 C ,IF=5.6A
diF/dt=100A/ µ s
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=4mH, I AS=4.7A, VDD=25V, RG=27 , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt <250A/ µs, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS
IRFR/U110A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
101
[A] ID , Drain Current
101
Top :
15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
150 oC
100
100 25 oC @ Notes : 1. V S = 0 V G - 55 oC 10-1 2. V S = 40 V D 3. 250 µs Pulse Test 6 8 10
10-1 10-1
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 100 101
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V] [A]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
08 .
Fig 4. Source-Drain Diode Forward Voltage
11 0
06 .
V S = 10 V G
04 .
IDR , Reverse Drain Current
10 0
02 .
VGS = 20 V @ N t : TJ = 2 oC oe 5
1 0 oC 5 2 oC 5 1 -1 0 04 . 06 . 08 . 10 . 12 .
@Nts: oe 1 VGS = 0 V . us et 2 2 0 µs P l e T s .5 14 . 16 . 18 . 20 .
00 .
0
5
10
15
2 0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Ciss= Cgs+ C d ( Cds= s o t d ) hre g Coss= Cds+ C d g 20 8 C iss Crss= Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
0 VDS = 2 V VDS = 5 V 0 VDS = 8 V 0
30 5
[pF]
20 1
C oss @Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
VGS , Gate-Source Voltage
1 0
Capacitance
10 4 C rss 70
5
@Nts:I =56A oe . D 0 0 2 4 6 8 1 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
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