Details, datasheet, quote on part number: IRFW/IZ44A
DescriptionAdvanced Power Mosfet
CompanyFairchild Semiconductor
DatasheetDownload IRFW/IZ44A datasheet


Features, Applications

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 60V Lower RDS(ON): 0.020 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25C) * Total Power Dissipation (TC=25C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 40 62.5 C/W Units

* When mounted on the minimum pad size recommended (PCB Mount).

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET TJ=25C,IF=50A diF/dt=100A/s

Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature VDD=25V, RG=27, Starting =25C (3) ISD 50A, di/dt 350A/ s, VDD BV DSS , Starting =25C (4) Pulse Test: Pulse Width 250 s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature


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