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Details, datasheet, quote on part number:J107
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| Part: | J107 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => PHEMTs |
| Description: | N-channel Switch |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download J107 datasheet File size : 736 kB |
| Request For quote: | Find where to buy J107
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Datasheet text preview:
J105 / J106 / J107 / JFTJ105
J105 J106 J107
JFTJ105
G
D G
SOT-223
G S
S
TO-92
D
NOTE: Source & Drain are interchangeable
N-Channel Switch
This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF T J , T s tg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J105 - 107 625 5.0 125 357
Max
JFTJ105 1,000 8.0 125
Units
mW mW /°C °C/W °C/W
1 9 9 7 Fairchild Semiconductor Corporation
J105 / J106 / J107 / JFTJ105
N-Channel Switch
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V(BR)GSS I GSS ID(off) VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Cutoff Voltage IG = - 10 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100°C VDS = - 5.0 V, VGS = - 10 V VDS = 5.0 V, ID = 1.0 µA 105 106 107 - 25 - 3.0 - 200 3.0 - 4.5 - 2.0 - 0.5 - 10 - 6.0 - 4.5 V nA nA nA V V V
ON CHARACTERISTICS
IDS S Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS 0.1 V, VGS = 0 105 106 107 105 106 107 500 200 100 3. 0 6. 0 8. 0 mA mA mA
r D S (o n )
Drain-Source On Resistance
SMALL SIGNAL CHARACTERISTICS
Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz VDS = 0, VGS = 10 V, f = 1.0 MHz VDS = 0, VGS = 10 V, f = 1.0 MHz 160 35 35 pF pF pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
Typical Characteristics
Common Drain-Source Characteristics
200 I D - DRAIN CURRENT (mA)
I D - DRAIN CURRENT (mA)
V =0V GS -1V
Common Drain-Source Characteristics
50
V =0V GS T A = + 25 C
0
150
40 30
- 0.1V
TYP V = -0.7V GS( OFF)
-2V
- 0.2V
100
-3V
20 10 0
- 0.3V
50
-4V -5V
T
A
= + 25 C
0
-0.4V - 0.5V
TYP V = -5V GS(OFF)
0
0
0.5 1 1.5 VDS - DRAIN-SOURCE VOLTAGE(V)
2
0
1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE(V)
5
J105 / J106 / J107 / JFTJ105
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Parameter Interactions
)
Capacitance vs Voltage
2,000
f=0.1-1.0MHz
200
r
rDS - DRAIN "ON" RESISTANCE (
V
50 20 10 5 2 1 0.1
@ VDS = 5.0V, ID =3nA GS(OFF)
I D- DRAIN CURRENT (mA)
100
DS
1,000
I DSS
Cis (Crs) - CAPACITANCE (pf)
@ VDS=100MV, VGS = 0
C
500 200 100
(V =5V) EI ,5
20 10 5
C
HI
(V
,5
=0V)
r
DS
50 20
0.2 0.3 0.5 1 23 5 V GS - GATE CUT OFF VOLTAGE (V)
10 10
1
0
-5 -10 -15 V GS - GATE-SOURCE VOLTAGE (V)
-20
--- NORMALIZED RESISTANCE
Normalized Drain Resistance vs Bias Voltage
- DRAIN "ON" RESISTANCE ( ) 20 10 5
V GS(OFF) @5V, 10uA rDS r DSb = --------------V GS 1 - ---------V
On Resistance vs Drain Current
V GS =0
V
20 10 5
= - 3.0V GS(OFF)
+125 C +125 C +25 C +25 C - 55 C V = - 5.0V GS(OFF)
0 0 0 0
0
GS(OFF)
1 0 0.2 0.4 0.6 0.8 1 V GS / V GS(OFF-- NORMALIZED GATE TO SOURCE VOLTAGE (V) ) 0.5
1
1
2
3 5 10 20 30 I D - DRAIN CURRENT (mA)
50
100
5
r DSb
OUTPUT CONDUCTANCE (u mhos)
- TRANSCONDUCTANCE (u mhos)
Output Conductance vs Drain Current
V DG = 5.0V 10V 15V 20V 10V 15V 20V 5.0V 10V 15V 20V 5.0V V
r
DS
Transconductance vs Drain Current
V DG = 10.0V T A = +25 0 C T T A A = - 55 C = +25
0 0 0
C
f = 1.0 k Hz
T = +125 C A
GS(OFF)
20 10
-4.0V
20 10
V = - 1.0V GS(OFF)
-2.0V
5
T A = +25 -1.0V f = 1.0 K Hz
0
5
V
C
= - 3.0V GS(OFF) = - 5.0V GS(OFF)
V
os -
g
1 0. 1
fs
0. 2 0. 3 0. 5 1 2 3 I D - DRAIN CURRENT (mA)
5
10
1 0. 1
g
0. 2 0. 3 0. 5 1 2 3 I D - DRAIN CURRENT (mA)
5
10
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