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Details, datasheet, quote on part number:J110
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| Part: | J110 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => PHEMTs |
| Description: | N-channel Switch |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download J110 datasheet File size : 133 kB |
| Request For quote: | Find where to buy J110
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Datasheet text preview:
J108/J109/J110/MMBFJ108
J108/J109/ J110/MMBF J108
N-Channel Switch
· This device is designed for digital switching applications where very low on resistance is mandatory. · Sourced from Process 58.
1 TO-92 1. Drain 2. Source 3. Gate 3 2 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 25 -25 10 -55 ~ +150 U n i ts V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
S ymb o l P arameter Test Condition IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 108 109 110 108 109 110 -3. 0 -2. 0 -0. 5 80 40 10 8. 0 12 18 85 15 15 Min. - 25 -3. 0 -200 -10 -6. 0 -4. 0 Max. Units V nA nA V V V mA mA mA pF pF pF Off Characteristics Gate-Source Breakdwon Voltage V(BR)GSS IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage
On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
Small Signal Characteristics Cdg(on) Csg(off) Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0MHz VDS = 0, VGS = -10, f = 1.0MHz VDS = 0, VGS = -10, f = 1.0MHz
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. J108 - 110 625 5. 0 125 357 556 *MMBFJ108 350 2. 8 Units mW mW / ° C °C/W °C/W
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06"
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Typical Characteristics
Common Drain-Source
r DS - DRAIN "ON" RESISTANCE ()
100 - DRAIN CURRENT (mA)
V GS = 0 V
- 2.0 V
Parameter Interactions
100 50
I DSS @ V DS = 5.0V, V GS = 0 PULSED r DS @ V DS = 100mV, V GS = 0 V GS(off) @ V DS = 5.0V, I
D
1,000
I
DSS -
80 60 40 20
- 5.0 V
500
- 1.0 V
- 3.0 V
= 3.0 nA
DRAIN CURRENT (mA)
10 5
r DS
100 50
I DSS
- 4.0 V T A = 25 °C TYP V GS(off) = - 5.0 V
I 0
D
0
0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V)
2
_
0.1 VGS (OFF)
10 _ _ _ 0.5 1 5 10 - GATE CUTOFF VOLTAGE (V)
_
Figure 1. Common Drain-Source
Figure 2. Parameter Interactions
Common Drain-Source
100 C ts (C rs ) - CAPACITANCE (pF) - DRAIN CURRENT (mA)
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)
Common Drain-Source
50 40 30 20 10 0
T A = 25 °C TYP V GS(off) = - 0.7 V
10
C rss (VDS = 0 )
V GS = 0 V
- 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V
0
-8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V)
-4
-20
I 0
D
1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V)
5
Figure 3. Common Drain-Source
Figure 4. Common Drain-Source
r DS - NORMALIZED RESISTANCE
100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 µA
e n - NOISE VOLTAGE (nV / Hz)
Normalized Drain Resistance vs Bias Voltage
Noise Voltage vs Frequency
100 50
V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz
r DS =
r DS V _ __ 1 - ___GS __ V GS(off)
10 5
I D = 1.0 mA I D = 10 mA
1 0.01 0.03
0.1 0.5 1 2 10 f - FREQUENCY (kHz)
100
Figure 5. Normalized Drain Resistance vs Bias Voltage
Figure 6. Noise Voltage vs Frequency
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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