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Details, datasheet, quote on part number:J210
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| Part: | J210 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) |
| Description: | N-channel RF Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download J210 datasheet File size : 204 kB |
| Request For quote: | Find where to buy J210
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Datasheet text preview:
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210 J211 J212
MMBFJ210 MMBFJ211 MMBFJ212
G
S G S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain are interchangeable
N-Channel RF Amplifier
T h i s device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 357
Max
*MMBFJ210-212 225 1.8 556
Units
mW m W / °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1 9 9 7 Fairchild Semiconductor Corporation
J 2 1 0 / J 2 11 / J 2 1 2 / M M B F J 2 1 0 / J 2 11 / J 2 1 2 , Rev A
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (BR)GSS IG S S V GS(off) G a t e - S o u r c e Breakdown Voltage G a t e Reverse Current G a t e - S o u r c e Cutoff Voltage I G = 1.0 µA, V D S = 0 V G S = 15 V, V D S = 0 V D S = 15 V, I D = 1.0 nA 210 211 212 - 25 - 100 -1.0 - 2.5 - 4.0 -3.0 - 4.5 - 6.0 V pA V V V
ON CHARACTERISTICS
ID S S Zero-Gate Voltage Drain Current* V DS = 15 V, V GS = 0 210 211 212 2.0 7.0 15 15 20 40 mA mA mA
SMALL SIGNAL CHARACTERISTICS
g fs C o m m o n Source Forward Transconductance V D S = 15 V, V G S = 0, f = 1.0 kHz 210 211 212 V D S = 15 V, V G S = 0, f = 1.0 kHz 4000 6000 7000 12,000 12,000 12,000 200 µmhos µmhos µmhos µmhos
goss
C o m m o n Source Output Conductance
*Pulse Test: Pulse Width 300 µS
Typical Characteristics
Parameter Interactions Common Drain-Source
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
5
Output Conductance vs. Drain Current
Transconductance vs. Drain Current
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