|
|
Part: J309
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Amplifier
Description: N-channel RF Amplifier
Company: Fairchild Semiconductor
Datasheet: Download J309 datasheet File size : 209 kB
Request For quote: Find where to buy J309
Datasheet text preview:
J309 / J310 / MMBFJ309 / MMBFJ310
J309 J310
MMBFJ309 MMBFJ310
G
S G S
TO-92
D
SOT-23
Mark: 6U / 6T
D
NOTE: Source & Drain are interchangeable
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings*
Symbol
VDS VGS IGF TJ ,Tstg Drain-Source Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J309-J310 625 5.0 125 357
Max
*MMBFJ309-310 350 2.8 556
Units
mW mW /°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1 9 9 7 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)GSS I GSS Gate-Source Breakdown Voltage Gate Reverse Current IG = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA - 25 - 1.0 - 1.0 309 310 - 1.0 - 2.0 - 4.0 - 6.5 V nA µA V V
VGS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
IDSS VGS(f) Zero-Gate Voltage Drain Current * Gate-Source Forward Voltage VDS = 10 V, VGS = 0 VDS = 0, IG = 1.0 mA 309 310 12 24 30 60 1. 0 mA mA V
SMALL SIGNAL CHARACTERISTICS
Re(yis) Common-Source Input Conductance Common-Source Output Conductance Common-Gate Power Gain VDS = 10, ID = 10 mA, f = 100 MHz 309 310 VDS = 10, ID = 10 mA, f = 100 MHz VDS = 10, ID = 10 mA, f = 100 MHz 0.7 0.5 0.25 16 12 12 10,000 8000 mmhos mmhos mmhos dB mmhos mmhos 20,000 µmhos 18,000 µmhos 150 µmhos 13,000 12,000 100 150 2.0 4.1 3.0 6.0 µmhos µmhos µmhos µmhos pF pF dB
nV/ H z
Re(yos) Gpg Re(yfs) Re(yig) gfs
Common-Source Forward VDS = 10, ID = 10 mA, f = 100 MHz Transconductance Common-Gate Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz Common-Source Forward Transconductance Common-Source Output Conductance Common-Gate Forward Conductance Common-Gate Output Conductance Drain-Gate Capacitance Source-Gate Capacitance Noise Figure Equivalent Short-Circuit Input Noise Voltage VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = 1.0 kHz VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 10, ID = 10 mA, f = 1.0 kHz 309 310 VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 10 V, ID = 10 mA, f = 450 MHz VDS = 10 V, ID = 10 mA, f = 100 Hz
goss gfg
5
gog
Cdg Csg NF en
2.5 5.0
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
(continued)
Typical Characteristics
Transfer Characteristics Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Input Admittance
Forward Transadmittance
Others parts begin by j3
J3-1
|
|
|
