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Details, datasheet, quote on part number:KSC1730
 
 
Part:KSC1730
Category:Discrete => Transistors => Bipolar => Switching => NPN
Description:NPN Epitaxial Silicon Transistor
Company:Fairchild Semiconductor
Datasheet:Download KSC1730 datasheet   File size : 42 kB
Request For quote:  Find where to buy KSC1730
 



Datasheet text preview:
KSC1730
K S C 1 7 30
TV VHF, UHF Tuner Oscillator
· High Current Gain Bandwidth Product : fT=1100MHz · Output Capacitance : COB=1.5pF (MAX.)
1
T O -9 2
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 15 5 50 250 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Co b Cc·rbb' Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Collector-Base Time Constant Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=12V, IE=0 VCE=10V, IC=5mA IC=10mA, IB=1mA VCE=10V, IC=5mA VCB=10V, IE=0, f=1MHz VCE=10V, IE=5mA f=31.9MHz 10 800 1100 1. 5 20 40 Min. 30 15 5 0.1 240 0.5 V M Hz pF ps Typ. Ma x . Units V V V µA
hFE Classification
Classification hF E R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC1730
Typical Characteristics
10
1000
VCE = 10V
IB = 90µA
IC[mA], COLLECTOR CURRENT
8
IB = 70µA
6
IB = 60µA IB = 50µA
hFE, DC CURRENT GAIN
IB = 80µA
100
4
IB = 40µA IB = 30µA
2
IB = 20µA IB = 10µA
0
10
0
2
4
6
8
10
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10
IC=10IB
f=1MHz IE=0
1
Cob[pF], CAPACITANCE
10
VBE(sat)
1
VCE(sat)
0.1
0.01 0.1
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
100 0.1
1
10
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC1730
Package Dimensions
TO-92
4.58 ­0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 ­0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 ­0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002