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Details, datasheet, quote on part number:KSC1845
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Datasheet text preview:
KSC1845
K S C 1 8 45
Audio Frequency Low Noise Amplifier
· Complement to KSA992
1
T O -9 2
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 500 150 -55 ~ 150 U n i ts V V V mA mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VBE (on) VBE (sat) fT Co b NL Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Level Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1. 6 25 2. 5 40 Min. Typ. Ma x . 50 50 1200 0.65 0. 3 V V M Hz pF mV Units nA nA
hFE Classification
Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
KSC1845
Typical Characteristics
10
IB=16µA IB=14µA
1.0
IB=1.4µA
IB=1.2µA IB=1.0µA IB=0.8µA IB=0.6µA
IC[mA], COLLECTOR CURRENT
IB=12µA
6
IB=10µA IB=8µA
IC[mA], COLLECTOR CURRENT
8
0.8
0.6
4
IB=6µA IB=4µA
0.4
IB=0.4µA
2
IB=2µA
0.2
IB=0.2µA
0
0
1
2
3
4
5
0.0
0
20
40
60
80
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000 900 800
VCE = 6V Pule Test
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
IC=10IB Pulse Test
10
hFE, DC CURRENT GAIN
700 600 500 400 300 200 100 0 0. 01
1
VBE(sat)
0.1
VCE(sat)
0. 1
1
10
100
0.01 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10
10k
IE = 0
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
VCE=6V
Cob[pF], CAPACITANCE
1k
1
100
0.1
1
10
100
10 0. 1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IE[mA], EMITTER CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
KSC1845
Typical Characteristics (Continued)
100
800
IC[mA], COLLECTOR CURRENT
10
PC[mW], POWER DISSIPATION
0.9
VCE = 6V Pulse Test
700 600 500 400 300 200 100 0
1
0.1
0.01 0.4
0.5
0.6
0.7
0.8
0
25
50
o
75
100
125
150
175
VBE[V], BASE-EMITTER VOLTAGE
Ta[ C], CASE TEMPERATURE
Figure 7. Collector Current vs. Base-Emitter Voltage
Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
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