|
Details, datasheet, quote on part number:KSC2073
| |
Datasheet text preview:
KSC2073
KSC2073
TV Vertical Deflection Output
· Complement to KSA940 · Collector-Base Voltage : VCBO = 150V
1
TO-220 2.Collector 3.Emitter
1. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 150 5 1.5 25 1 50 - 55 ~ 150 U n i ts V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hF E VCE(sat) fT Co b Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 500µA, IE = 0 IC = 10mA, IB = 0 IE = - 500µA, IC = 0 VCB = 120V, IE = 0 VCE = 10V, IC = 0.5A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A VCB =10V, IE = 0 f = 1MHz 4 50 40 75 Min. 15 0 15 0 5 10 140 1 V MH z pF Typ. Ma x . Units V V V µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2073
Typical Characteristics
1.0 0.9
1000
VC E=10V IB=8mA IB=7mA IB=6mA IB =5mA IB=4mA IB=3mA IB =2mA IB=1mA
0 5 10 15 20 25 30 35 40 45 50 10 0.01 0. 1 1 10
IC[A], COLLECTOR CURRENT
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
hFE, DC CURRENT GAIN
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
VBE(sat),VCE(sat)[V], SATURATION VOLTAGE
IC =10IB
f=1MHz IE = 0
1
VBE(sat)
Cob[pF], CAPACITANCE
1 10
100
VC E(sat)
0.1
0.01 0.01
0.1
10
1
10
100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter On Voltage
10
40
1.TC =25 2.*Single pulse
35
IC[A], COLLECTOR CURRENT
PD[W], POWER DISSIPATION
30 25 20 15 10 5 0
DC
*1mS
1
Thermal limitation S/B limitation
S/B limitation
0.1
10
100
0
25
50
75
100
125
150
VCE[V], COLLECTOR EMITTER VOLTAGE
T C[], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2073
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
|
|
