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Details, datasheet, quote on part number:KSC2223
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Datasheet text preview:
KSC2223
K S C 2 2 23
High Frequency Amplifier
· · · · Very small size to assure good space factor in Hybrid IC applications fT=600MHz (TYP) at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz
3
2 1
S O T -2 3
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 4 20 150 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) Co b fT Cc·rbb NF Parameter Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Time Constant Noise Figure Test Condition VCB=30V, IE=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA VCB=6V, IC=1mA f=31.9MHz VCE=6V, IC=1mA f = 100MHz , RS = 5 0 400 Min. 40 Typ. 90 0.1 1 600 12 3 Ma x . 0.1 180 0. 3 V pF M Hz ps dB Units µA
hFE Classification
Classification hF E R 40 ~ 80 M a r ki n g O 60 ~ 120 Y 90 ~ 180
H5O
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSC2223
Typical Characteristics
10
1 000
VC E = 6V
IC[mA], COLLECTOR CURRENT
8
IB = 80µA
6
IB = 60µA IB = 50µA
hFE, DC CURRENT GAIN
IB = 70µA
1 00
4
IB = 40µA IB = 30µA
2
IB = 20µA IB = 10µA
0
0
4
8
12
16
20
10 0 .1
1
10
1 00
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain 1
1 000
IC = 1mA
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
IC = 10 IB
hFE, DC CURRENT GAIN
1
VBE(sat)
1 00
0.1
VCE(sat)
10
1
10
1 00
0.01 0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain 2
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
VCE = 6V
Cc.rbb[ps], COLLECTOR-BASE TIME CONSTANT
100 0
1 00
IC[mA], COLLECTOR CURRENT
VC B = 6V f = 31.9MHz
100
10
10
1
0 .1 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
1 0 .1
1
10
1 00
VBE[V], BASE-EMITTER VOLTAGE
IE[mA], EMITTER CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Collector-Base Time Constant
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSC2223
Typical Characteristics (Continued)
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10 000
24
VCE = 6V f = 100MHz
VC E = 6V
20
NF[dB], NOISE FIGURE
16
12
10 00
8
4
0 0 .1
1
10
10 0 0. 1
1
10
10 0
IE[mA], EMITTER CURRENT
IE[mA], EMITTER CURRENT
Figure 7. Noise Figure
Figure 8. Current Gain Bandwidth Product
10
200
f = 1MHz
180
Cie[pF], INPUT CAPACITANCE Cob[pF], OUTPUT CAPACITANCE
PC[mW], POWER DISSIPATION
1 00
160 140 120 100 80 60 40 20
Cie (IC=0)
1
Cob (IE= 0)
0 .1 0 .1
1
10
0
0
25
50
o
75
100
125
150
175
VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE
Ta[ C], AMIBIENT TEMPERATURE
Figure 9. Input and Output Capacitance
Figure 10. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
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