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Details, datasheet, quote on part number:KSC2233
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Datasheet text preview:
KSC2233
K S C 2 2 33
B/W TV Horizontal Deflection Output
· Collector-Base Voltage : VCBO = 200V · Collector Current (DC) : IC = 4A · Collector Dissipation : PC = 40W
1
TO-220 2.Collector 3.Emitter
1. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 60 5 4 40 150 -55 ~ +150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 1mA, IE = 0 IC = 20mA, IB =0 IE = 1mA, IC = 0 VCB = 170V, IE = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A 10 30 20 40 1 1.5 V V M Hz Min. 200 60 5 10 150 Typ. M ax. Units V V V µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2233
Typical Characteristics
5
VC E = 5V
IC[A], COLLECTOR CURRENT
4
3
IB = 30 mA IB = 25 mA
2
IB = 20 mA IB = 15 mA
hFE, DC CURRENT GAIN
IB = 50 mA IB = 45 mA IB = 40 mA IB = 35 mA
1 000
1 00
1
IB = 10 mA IB = 5 mA
0
0
4
8
12
16
20
10 0 .0 1
0 .1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1 000
IC = 10 IB
f = 1 MHz IE = 0
1
V BE(sat)
COB(pF), CAPACITANCE
0 .1 1 10
1 00
0 .1
V CE(sat)
0 .0 1 0 .0 1
10
1
10
1 00
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
80
IC[A], COLLECTOR CURRENT
Thermal limitation *200ms
1
*10ms
PD[W], POWER DISSIPATION
S/B limitation
60
40
S/B limitation 1. T=25 C 2. *Single pulse
0 .1 10 100
o
20
0
0
25
o
50
75
1 00
1 25
1 50
V CE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2233
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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