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Details, datasheet, quote on part number:KSC2258
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| Part: | KSC2258 |
| Category: | Discrete => Transistors => Bipolar => High Voltage => NPN |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSC2258 datasheet File size : 46 kB |
| Request For quote: | Find where to buy KSC2258
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Datasheet text preview:
KSC2258/2258A
KSC 2258/2258A
High Voltage General Amplifier TV Video Output Amplifier
· High BVCEO
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Par a m e ter Collector-Base Voltage : KSC2258 : KSC2258A Collector-Emitter Voltage : KSC2258 : KSC2258A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 250 300 6 100 150 4 150 - 55 ~ 150 V V V mA mA W °C °C 250 300 V V Value Units
VCEO
VEBO IC ICP PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVEBO ICER hFE1 hFE2 VCE(sat) VBE(on) fT C ob Param eter Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IE = 0.1mA, IC = 0 VCE = 250V, RBE = 100K VCE = 20V, IC = 40mA VCE = 50V, IC = 5mA IC = 50mA, IB = 5mA VCE = -20V, IC = 40mA VCE = 10V, IC = 10mA VCB = 50V, f = 1MHz 100 3 4.5 40 30 1.2 1.2 V V M Hz pF Min. 6 Typ. M ax. 100 Units V µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2258/2258A
Typical Characteristics
100
IB=2.0mA
IC[mA], COLLECTOR CURRENT
80
hFE, DC CURRENT GAIN
60
IB =1.8mA IB=1.6mA IB =1.4mA IB =1.2mA IB=1.0mA IB=0.8mA IB =0.6mA IB =0.4mA
1 000
VC E = 10V
1 00
40
10
IB=0.2mA
20
0
0
2
4
6
8
10
1 0 .1
1
10
1 00
VCE [V ], COLLECTOR-EMITTER VOLTAGE
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
f = 1 MHz
10 1
0 .1
V CE(sat)
0 .0 1
COB(pF), CAPACITANCE
10 100 1000 1 1
1
10
100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10 00
5
VC B = 10 V
10 0
PD[W], POWER DISSIPATION
4
3
2
10
1
1
0 1 10 10 0
0
25
50
75
o
100
125
150
175
200
225
250
IC[mA], COLLECTOR CURRENT
TC[ C], CASE TEMPERATURE
Figure 5. Current Gain Bandwidth Product
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2258/2258A
Package Demensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
±0.30
(0.50) 1.75 ±0.20
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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