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Details, datasheet, quote on part number:KSC2328A
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Datasheet text preview:
KSC2328A
KSC232 8A
Audio Power Amplifier Applications
· Complement to KSA928A · Collector Power Dissipation : PC=1W · 3 Watt Output Application
1
T O -92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG P arameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 5 2 1 150 -55 ~ 150 U n i ts V V V A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Co b P a r a m e te r Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCB=10V,IE=0, f=1MHz 120 30 1 00 Min. 30 30 5 100 100 320 1.0 2.0 V V MHz pF Typ. M ax. Units V V V nA nA
hFE Classification
Classification hF E O 100 ~ 200 Y 160 ~ 320
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2328A
Typical Characteristics
14 00
IB = 7mA IB = 6mA
VC E = 2V
IC[mA], COLLECTOR CURRENT
12 00
10 00
hFE, DC CURRENT GAIN
IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA
1 000
80 0
60 0
1 00
40 0
20 0
0
10 0 2 4 6 8 10 12 14 16 18
1
10
1 00
1 000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
140 0
VCE = 2V
IC = 50 IB Ta = 25 C
1
120 0
IC[mA], COLLECTOR CURRENT
o
100 0
800
600
0.1
400
200
0.01
1
10
100
1000
0 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
1 .4
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1.4
IC (MAX) PULSE
1.2
IC[A], COLLECTOR CURRENT
IC (MAX)
1
1s T DC =2 5 O
o
PC[W], POWER DISSIPATION
100
s 1m
1.0
C
C
PE RA
0.8
TI N
G
0.6
0 .1
0.4
V CEO (MAX)
0 .0 1 0 .1
0.2
1
10
0.0
0
25
50
o
75
100
125
150
175
VCE [V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMIBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2328A
Package Dimensions
TO-92L
4.90 ±0.20
8.00 ±0.20
1.70 ±0.20
1.00 ±0.10
0.70MAX. 0.80 ±0.10 1.00MAX.
13.50 ±0.40
0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10
1.45 ±0.20
3.90 ±0.20
3.90 ±0.20
0.45 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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