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Details, datasheet, quote on part number:KSC2330A
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| Part: | KSC2330A |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSC2330A datasheet File size : 40 kB |
| Request For quote: | Find where to buy KSC2330A
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Datasheet text preview:
KSC2330A
KSC233 0A
Color TV Chroma Output
· Collector-Base Voltage : VCBO=400V · Current Gain Bandwidth Product : fT=50MHz (TYP.)
1
T O -92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG P arameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 400 400 7 100 1 150 -55 ~ +150 U n i ts V V V mA W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Co b P a r a m e te r Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=10V, IC=20mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz 50 4 40 Min. 4 00 4 00 7 0.1 80 0.5 V MH z pF Typ. M ax. Units V V V µA
hFE Classification
Classification hF E R 40 ~ 65 O 55 ~ 80
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2330A
Typical Characteristics
20
1 000
VC E = 10V
IC[mA], COLLECTOR CURRENT
16
IB = 120µA
hFE, DC CURRENT GAIN
12
IB = 100µA IB = 80µA
1 00
8
IB = 60µA IB = 40µA
10
4
IB = 20µA
0
1
0
20
40
60
80
100
120
1
10
1 00
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1 00
IC = 10 IB
f = 1MHz IE = 0
Cob[pF], CAPACITANCE
1
VBE(sat)
10
0.1
VCE(sat)
1
0.01
0 .1
1
10
100
1
10
1 00
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
1.6 1.4
PC[W], POWER DISSIPATION
1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
25
50
o
75
100
125
150
175
Ta[ C], AMIBIENT TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2330A
Package Dimensions
TO-92L
4.90 ±0.20
8.00 ±0.20
1.70 ±0.20
1.00 ±0.10
0.70MAX. 0.80 ±0.10 1.00MAX.
13.50 ±0.40
0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10
1.45 ±0.20
3.90 ±0.20
3.90 ±0.20
0.45 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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