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Details, datasheet, quote on part number:KSC2331
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Datasheet text preview:
KSC2331
K S C 2 3 31
Low Frequency Amplifier & Medium Speed Switching
· · · · Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W
1
T O -92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG P arameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 80 60 8 700 1 150 -55 ~ 150 U n i ts V V V mA W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Co b P a r a m e te r Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz 30 40 0.2 0.86 50 8 Min. 80 60 8 0.1 0.1 240 0.7 1. 20 V V MH z pF Typ. M ax. Units V V V µA µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2331
Typical Characteristics
200 180
2 40
VC E = 2V
2 00
IC[mA], COLLECTOR CURRENT
160 140 120 100 80 60 40 20 0
IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA
0 0 5 10 15 20 25 30 35 40 45 50 55 1 10 1 00 1 000
hFE, DC CURRENT GAIN
1 60
1 20
80
40
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100 0
IC = 10 IB
VCE = 2V
IC[mA], COLLECTOR CURRENT
1
VBE(sat)
100
0.1
10
VCE(sat)
0.01
1
10
100
1000
1 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100 00
1.6
1. Ta = 25 C 2. *Single Pulse
1.4
o
IC[mA], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
100 100 0
1.2 1.0 0.8 0.6 0.4 0.2
100 0
*2 00 s m
DC
100
10
1
10
0.0
0
25
50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMIBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2331
Package Dimensions
TO-92L
4.90 ±0.20
8.00 ±0.20
1.70 ±0.20
1.00 ±0.10
0.70MAX. 0.80 ±0.10 1.00MAX.
13.50 ±0.40
0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10
1.45 ±0.20
3.90 ±0.20
3.90 ±0.20
0.45 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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