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Details, datasheet, quote on part number:KSC2333
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Datasheet text preview:
KSC2333
K S C 2 3 33
High Speed Switching Application
· Low Collector Saturation Voltage · Specified of Reverse Biased SOA With Inductive Load
1
TO-220 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1. Base
Value 500 400 7 2 4 1 15 150 - 55 ~ 150
Units V V V A A A W °C °C
*PW350µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF P a r a m e te r Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 0.5A, IB =0.1A, L = 1mH IC = 0.5A, IB1 = -IB2 = 0.1A TC = 125°C, L = 180µH, clamped IC = 1A, IB1 = 0.2A, -IB2 =0.2A TC= 125°C, L = 180µH, clamped VCB = 400V, IE = 0 VCE = 400V, RBE =51, TC = 125°C VCE = 400V, VBE(off) = -5V VCE = 400V, VBE(off) = -5V @ TC = 125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.5A, IB = 0.1A IC = 0.5A, IB = 0.1A VCC = 150V, IC = 0.5A IB1 = - IB2 = 0.1A RL = 300 20 10 Min. 400 450 400 10 1 10 1 10 80 1 1. 2 1 2. 5 1 V V µs µs µs Ma x . Units V V V µA mA µA mA µA
* Pulse Test: PW350µs, Duty Cycle2%Pulsed
hFE Classification
Classification hFE1
©2001 Fairchild Semiconductor Corporation
R 20 ~ 40
O 30 ~ 60
Y 40 ~ 80
Rev. A1, June 2001
KSC2333
Typical Characteristics
1. 0
1 000
Ic[A], COLLECTOR CURRENT
0. 8
IB = 100mA IB = 60mA
IB = 90mA IB = 80mA IB = 70mA IB = 50mA
VC E = 5V Pulsed
hFE, DC CURRENT GAIN
5
0. 6
1 00
IB = 40mA IB = 30mA IB = 20mA IB = 10mA
0. 4
10
0. 2
0. 0
0
1
2
3
4
1
1
10
1 00
1 000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[m A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10
IC /IB = 5 Pulsed
IC = 5IB1 = -5IB2 Pulsed
ton[µs], TURN ON TIME tstg[µs], STORAGE TIME tf[µs], FALL TIME
tstg
1
1
V BE(sat)
tf ton
0. 1
0 .1
V CE(sat)
0 .0 1
0. 01 1 10 100 1000
10
10 0
10 00
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time vs Collector Current
1 0000
1 .0 0 .9
IC[mA], COLLECTOR CURRENT
Diss
1 000
ipat ion L
1m
imit ed
S
0µ
S
0µ
S
IC(A), COLLECTOR CURRENT
10
PW
=1
0 .8 0 .7 0 .6 0 .5 0 .4
b S/ ite m Li
10
m
S
d
VCEO(SUS)
VCEX(SUS)
1 00
0 .3 0 .2 0 .1
10
1
10
1 00
1 000
0 .0
0
50
100
150
200
250
300
350
400
450
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE (V), COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2333
Typical characteristics (Continued)
16 0 14 0 12 0
2 0 .0 1 7 .5
PC[W], POWER DISSIPATION
15 0 17 5 20 0
1 5 .0 1 2 .5 1 0 .0 7 .5 5 .0 2 .5 0 .0
dT(%), Ic DERATING
10 0 80
S /b Limited
60 40 20 0
Dissipation Limited
0
25
50
o
75
10 0
12 5
0
25
50
o
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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