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Details, datasheet, quote on part number:KSC2334
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Datasheet text preview:
KSC2334
K S C 2 3 34
High Speed Switching Industrial Use
· Complement to KSA1010
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature
1
TO-220 2.Collector Value 150 100 7 7 15 3.5 40 1.5 150 - 55 ~ 150 3.Emitter U n i ts V V V A A A W W °C °C
1. Base
* PW300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
S ymb o l VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hF E 2 hFE3 VCE(sat) VBE(sat) tON tSTG tF P a r a m e te r Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition IC = 5A, IB1= 0.5A, L = 1mH IC = 5A, IB1 = -IB2 = 0.5A VBE(off) = -5V, L = 180µH, Clamped IC = 10A, IB1 =1A, IB2 = -0.5A, VBE(off) = -5V, L = 180µH, Clamped VCB = 100, IE = 0 VCE = 100V, RBE = 51@TC =125°C VCE = 100V, VBE(off) = -1.5V VCE = 100V, VBE(off) = -1.5V @ TC= 125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCC = 50V, IC = 5A IB1 = -IB2 = 0.5A RL = 10 40 40 20 Min. 100 100 100 10 1 10 1 10 240 0. 6 1. 5 0. 5 0. 5 1. 5 V V µs µs µs M ax. Units V V V µA mA µA mA µA
Emitter Cut-off Current * DC Current Gain
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time
* Pulse Test: PW350µs, Duty Cycle2%Pulsed
hFE Classification
Classification hF E 2
©2001 Fairchild Semiconductor Corporation
R 40 ~ 80
O 70 ~ 140
Y 120 ~ 240
Rev. A1, August 2001
KSC2334
Typical Characteristics
IB = 100 mA
5
IB = 90mA
1 000
IB = 80mA
IB = 70mA IB = 60mA IB = 50mA
VC E = 5V
IC[A], COLLECTOR CURRENT
4
hFE, DC CURRENT GAIN
5
1 00
3
IB = 40mA IB = 30mA IB = 20mA
2
10
1
IB = 10mA
0
0
1
2
3
4
1 0 .0 1
0 .1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC/IB = 10
IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT
10
1
V BE(sat)
Di Lim ssip ite atio dn
1
10 0m s
1m s 10 ms
50 µs 10 0 30 µs 0µ s
0 .1
b S/
V CE(sat)
d ite m Li
0.1
0 .0 1 0 .0 1
0 .1
1
10
0.01
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
16 0 14 0 12 0
50 45
PC[W], POWER DISSIPATION
15 0 17 5 20 0
40 35 30 25 20 15 10 5 0
dT(%), Ic DERATING
10 0 80
S /b Limited
60 40 20 0
Dissipation Limited
0
25
50
o
75
10 0
12 5
0
25
50
75
o
1 00
1 25
1 50
1 75
2 00
2 25
2 50
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSC2334
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
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