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Details, datasheet, quote on part number:KSC2335
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Datasheet text preview:
KSC2335
KSC2335
High Speed, High Voltage Switching
· Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO V EBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1
TO-220 2.Collector Value 500 400 7 7 15 3.5 1.5 40 150 - 55 ~ 150 3.Emitter U n i ts V V V A A A W W °C °C
1. Base
* PW300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF P arameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 3A, IB1 = 0.6A, L = 1mH IC = 3A, IB1 = -IB2 = 0.6A VBE(off) = -5V, L = 180µH, Clamped IC = 6A,IB1= 2A, IB2 = -0.6A VBE(off) = -5V, L = 180µH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE= 51 @ TC=125°C VCE = 400V, VBE(off)= -1.5V VCE = 400V, VBE(off)= -1.5V @ TC=125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCC =150V, IC= 3A IB1 = -IB2 = 0.6A RL= 50 20 20 10 Min. 400 450 400 10 1 10 1 10 80 80 1 1.2 1 2.5 1 V V µs µs µs M ax. Units V V V µA mA µA mA µA
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse Test: PW350µs, Duty Cycle2% Pulsed
hFE Classification
Classification hFE2
©2001 Fairchild Semiconductor Corporation
R 20 ~ 40
O 30 ~ 60
Y 40 ~ 80
Rev. A1, June 2001
KSC2335
Typical Characteristics
IB=0.45A IB=0.50A IB=0.40A IB=0.35A IB=0.30A IB=0.25A IB=0.20A
3 1000
5
VCE = 5 V Pulsed
IC[A], COLLECTOR CURRENT
4
hFE, DC CURRENT GAIN
100
IB=0.15A IB=0.10A
2
10
IB=0.05A
1
0
0
1
2
3
4
5
1 0 .0 1
0 .1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(SAT) [V], VBE(SAT) [V], SATURATION VOLTAGE
10
160
IC = 5 IB Pulsed
140 120
1
VBE(SAT )
dT [%], IC DERATING
100 80
S/b Limited
60 40
0 .1
VCE(SAT )
Dissip ation Limited
20 0
0 .0 1 0 .0 1
0 .1
1
10
0
50
o
100
150
200
VCB[V], COLLECTOR-BASE VOLTAGE
TC [ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Derating Curve of Safe Operating Areas
10
1 00
Single Pulse
P W = 10 us
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
8
10
50 us
1
6
Dissipation Limoted
0.1 ms 0.3 ms 1 ms 100 ms
4
0 .1
S /b Limited
VCEO(SUS)
2
VCEX(SUS)
0 .0 1
10 ms
0
0
10 0
20 0
30 0
40 0
50 0
1 E -3
1
10
1 00
1 000
1 000 0
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2335
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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