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Details, datasheet, quote on part number:KSC2517
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Datasheet text preview:
KSC2517
K S C 2 5 17
High Speed Switching Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC IB TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Base Current Junction Temperature Storage Temperature
1
TO-220 2.Collector Value 150 100 12 5 10 1. 5 30 2. 5 150 - 55 ~ 150 3.Emitter Units V V V A A W W A °C °C
1. Base
* Pw300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Param eter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition IC = 3A, IB1 = 0.3A, L = 1mH IC = 3A, IB1 = -IB2 = 0.3A VBE(off) = -5V, L = 180µH, Clamped IC =6A, IB1 = 1.2A, IB2 = -0.3A, VBE(off) = -5V, L = 180µH, Clamped VCB = 100V, IE = 0 VCE = 100V,RBE = 51@ TC= 125°C VCE = 100V, VBE(off) = -1.5V VCE = 100V, VBE(off) = -1.5V @ TC= 125°C VEB = 10V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 2A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCC = 50V, IC = 3A IB1 = -IB2 = 0.3A RL= 17 40 40 Min. 100 150 100 10 1 10 1 10 200 0.6 1.5 0.5 2.5 0.5 V V µs µs µs M ax. Units V V V µA mA µA mA µA
Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse Test: PW350µs, Duty Cycle2%
hFE Classification
Classification hFE2 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2517
Typical Characteristics
5
10 I B=
A A A 90m IB=80m 0m I B=
1000
IC[A], COLLECTOR CURRENT
4
mA I B=70 mA I B=60 IB =50mA
VC E = 5V
IB=40mA
3
hFE, DC CURRENT GAIN
5
100
IB=30mA
2
IB =20mA IB=10mA
10
1
0
0
1
2
3
4
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC =10IB
IC[A], COLLECTOR CURRENT
10
1
VBE(sat)
30 10 us 0u s 30 0u s
Di n tio ipa ss e d it m Li
s s 1m 10m
1
VCE (sat)
0.1
s ed 0m mit 10 Li b S/
0.1
0.01 0.01
0.01 0.1 1 10
1
10
100
1000
10000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
8 7
160 140 120
IC[A], COLLECTOR CURRENT
6 5 4 3
dT[%], IC DERATION
100 80 60 40 20 0
S/b
DI SS IP AT I
LIM
ITE D
VCEO(SUS)
VCEX(SUS)
2 1 0
O N
LI M
UT ED
120 140 160 180 200
0
50
100
150
200
0
20
40
60
o
80
100
V CE(s), COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2517
Typical Characteristics (Continued)
40 35
PD[W], POWER DISSIPATION
30 25 20 15 10 5 0
0
50
o
100
150
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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