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Details, datasheet, quote on part number:KSC2682
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Datasheet text preview:
KSC2682
KSC2682
Audio Frequency Power Amplifier
· Complement to KSA1142
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 180 180 5 100 1.2 8 150 -55 ~ 150 U n i ts V V V mA W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hF E 2 VCE(sat) VBE(sat) fT Co b NF Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition VCB = 180V, IE = 0 VEB = 3V, IC= 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCE = 10V, IC = 20mA VCB = 10V, IE = 0 f = 1MHz VCE = 10V, IC = 1mA RS = 10K, f = 1kHz 90 10 0 190 200 0.12 0.8 200 3.2 4 5.0 Min. Typ. Ma x . 1.0 1.0 320 0.5 1.5 V V MH z pF dB Units µA µA
* Pulse Test: PW350µs, Duty Cycle2%
hFE Classificntion
Classification hF E 2 O 100 ~ 200 Y 160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2682
Typical Characteristics
160
1 000
Pulse Test
VC E= 5V
Ic[mA], COLLECTOR CURRENT
140 120 100 80 60 40 20
IB=500uA IB =450uA IB=400uA
hFE, DC CURRENT GAIN
1 00
IB =350uA IB=300uA IB =250uA IB =200uA IB=150uA IB=100uA IB =50uA IB = 0
10
0
20
40
60
80
100
120
140
160
1 0 .1
1
10
1 00
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat), VBE(sat)[V], SATURATION VOLTAGE
10
IC= 10 IB
100
IE = 0 f=1.0MHz
1
VBE(sat)
Cob[pF], CAPACITANCE
10
0 .1
VCE(sat)
0 .0 1 0 .1
1 1 10 100
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
VCE = 10V
10 00
IC[A], COLLECTOR CURRENT
10 0
I c M A X (D C )
10m s
1m s
D C (5
0m
100
s)
10
10
1 1 10 100
1
10
10 0
VCEOM AX
10 00
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2682
Typical Characteristics (Continued)
1 60 1 40 1 20 1 00 80 60 40 20 0
16 14
pD[W], POWER DISSIPATION
1 50 2 00
dT[%], IC DISSIPATION
12 10 8 6 4 2 0
Di
S/B
ss ip at io
L im
n
ited
Li
m
ite
d
0
50
O
1 00
0
50
o
1 00
1 50
2 00
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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